Mantech reflects its roots...
July 15, 2010
Increasing GaAs fab throughout, streamlining carrier mobility measurements on pHEMT production wafers and suggesting new ways to improve the performance of this class of transistor...
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LED droop: do defects play a major role?...
July 14, 2010
Theorists are proposing that density activated defect recombination (DADR) can account for droop, the decline in a nitride LED’s external quantum efficiency at high drive...
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Uniting III-Vs and germanium for CMOS...
July 14, 2010
Unleashing the high electron and hole mobilities of InGaAs and germanium in an evolutionary CMOS architecture is possible by introducing a common gate stack. This...
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