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Nitronex develops 45W GaN-on-silicon RF power transistor…
…for high peak-to-average power applications
NPT1004 GaN power transistor addresses 2.5 and 3.5GHz markets
LAS VEGAS — GOMAC Tech, Booth #106 (March 19, 2008) — Nitronex, the leading producer of GaN-on-Silicon RF power devices for the broadband and commercial wireless infrastructure markets, has developed a gallium nitride high electron mobility transistor (HEMT) that delivers 45W at 28V for high PAR (peak to average ratio) and pulsed applications.
Designed using Nitronex's patented SIGANTIC NRF1 process, the NPT1004 combines a broadband DC to 4GHz high power density GaN-on-Si HEMT with a cost-effective thermally-enhanced plastic package to offer an optimized solution for light thermal load power applications.
"Feedback from early customers confirms that the NPT1004 is an excellent fit for high peak to average power amplifiers for WiMAX and pulsed waveforms found in radar, telemetry and medical applications," said Chris Rauh, VP of Marketing and Sales at Nitronex.
"We believe these markets need the unique power, bandwidth and efficiency combination GaN devices can offer and Nitronex is excited to offer a product optimized for this customer base."
The NPT1004 delivers 5W average power for 2.5-3.5GHz WiMAX applications (single carrier OFDM 64-QAM 3/4, 10.3dB peak to average, 10MHz channel bandwidth) and 4.5W for 3.3-3.5GHz WiMAX applications (single carrier OFDM 64-QAM 3/4, 10.3dB peak to average,
3.5MHz channel bandwidth).
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