June 2008 Archives

More cable TV applications for compound semiconductor components, with volume shipments expected later this year

GREENSBORO, N.C., June 27 /PRNewswire-FirstCall/ -- RF Micro Devices, Inc. (Nasdaq: RFMD - News), a global leader in the design and manufacture of high-performance semiconductor components, today announced the release of the CXE-1089Z GaAs pHEMT LNA for use in cable set-top box and digital television (DTV) applications. The CXE-1089Z is optimized for both low noise figure and low current consumption in order to best satisfy the increasing performance requirements of next-generation, higher-bandwidth devices.

Georgia Tech group led by Russell Dupuis demonstrates that GaN-based detectors have anti-terror potential

Atlanta (June 25, 2008) -- Researchers have shown that a new class of ultraviolet photodiode could help meet the U.S. military's pressing requirement for compact, reliable and cost-effective sensors to detect anthrax and other bioterrorism agents in the air.

Steven R. Grant joins GaAs giant as VP of worldwide operations

HILLSBORO, OREGON -- June 26, 2008 -- TriQuint Semiconductor (Nasdaq: TQNT), a leading RF semiconductor manufacturer and foundry services provider, today announced that Steven R. Grant will join the company July 16, 2008, as Vice President of Worldwide Operations, reporting to President and CEO, Ralph Quinsey. Mr. Grant will be responsible for TriQuint's global manufacturing including purchasing, manufacturing quality and supply chain operations.

$20million, multi-year deal positions IQE as the sole supplier of GaAs-based PHEMT epiwafers

IQE plc is pleased to announce that its Pennsylvania based business unit has been awarded a multi-year contract extension as sole supplier of GaAs-based PHEMT epi-wafers to a major US wireless component manufacturer.

GaN Amplifiers Deliver Unmatched Performance And Design Flexibility

GREENSBORO, N.C., June 25 /PRNewswire-FirstCall/ -- RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance radio frequency systems and solutions, today released the industry's first gallium nitride (GaN) based CATV amplifier modules.

Microwave Tubes Still Have a Vital Role to Play in RF Power, says Analyst from ABI Research

SCOTTSDALE, Ariz. - June 24, 2008 -
Microwave and millimeter wave high-power vacuum electron devices (VEDs) represent a modern technological continuation of one of the original and basic building blocks of RF electronics technology. Based on original vacuum tube (valve) principles that date from the turn of the 19th to 20th centuries, these present-day incarnations couple modern design and manufacturing techniques to produce reliable high-performance RF power devices.

Aachen/Germany, June 24, 2008 - AIXTRON AG announced today that Visual Photonics Epitaxy Co. Ltd. (VPEC), Taiwan, a leading manufacturer of microelectronic and optoelectronic epiwafers, has placed another order for multiple AIX 2600G3 IC systems.

CLEVELAND -- Texas-based United Supermarkets, LLC, has retrofitted low- and medium-temperature refrigerated display cases in all of its 47 stores with a GE ecomagination product - a light-emitting diode (LED) solution from Lumination, a GE Consumer & Industrial business.

Supply agreement formalizes the relationship for manufacture of TriAccess products using TriQuint's six-inch GaAs foundry process

SANTA ROSA, Calif.--(BUSINESS WIRE)--TriAccess Technologies, a leading provider of CATV and FTTH (Fiber-To-The-Home) radio frequency integrated circuits (RFIC) for amplifying high quality multimedia content, has introduced a new high performance, low noise 75 Ohm drop amplifier for hybrid fiber/coax CATV network applications. Volume shipments of the TAT 7461 began in May.

Silicon Carbide power transistor manufacturer closes successful second round

Kista, Sweden (June 23, 2008) -- TranSiC AB, developer of power transistors in the wide-bandgap material Silicon Carbide today announced that it has raised SEK 24 million ($ 4 million, EUR 2.6 million) venture capital in a second financing round with Industrifonden, Volvo Technology Transfer and Midroc New Technology.

Integrated design delivers a three-stage amplifier on a single chip

Osaka, June 18, 2008 - (JCN Newswire) - Panasonic, the leading brand by which Matsushita Electric Industrial Co., Ltd. is generally known, today announced the development of GaN integrated circuits (ICs) for the receiver in future millimeter-wave communication systems. The developed amplifier IC achieved the gain of 22dB at 26GHz which is the world highest value in GaN-based ICs at such high frequencies.

The German company's Golden Dragon series of LEDs are set to light up one of China's industrial heartlands

OSRAM Opto Semiconductors Asia Ltd. announced the formation of a new partnership with Shenzhen SED Industry Co., Ltd. to launch an LED street lamp project in Mainland China.

UK funding council supports four-university project on new class of light-emitting semiconductors

Novel, compact and versatile lasers operating at visible wavelengths are the focus of a major, new £3.8 million ($7.5m) collaboration between four institutions.

Transmitter based on InP HEMTs featured in research paper at the International Microwave Symposium in Atlanta; practical use anticipated in 2012

Kawasaki and Tokyo, Japan, June 19, 2008 - (JCN Newswire) - Fujitsu Laboratories Ltd. and Fujitsu Limited announced today, as a world's first, the development of a transmitter operating in the 70-100 GHz band using impulse radio that is capable of transmitting data at speeds of more than 10 Gb/s.

Reactor to fabricate GaN LED structures on glass substrates arrives ahead of schedule

Next generation lighting pioneer BluGlass Limited (BLG) today announced that its pilot
manufacturing plant built in Sydney to demonstrate its light emitting diode technology
and facilitate licencing would be officially opened on 17 July 2008.

Releases 90W High-Frequency Devices; Ku-band Foundry Service Opened for September Starts

HILLSBORO, OR & ATLANTA, GA (USA) -- June 18, 2008 -- TriQuint Semiconductor (Nasdaq: TQNT), a leading RF semiconductor manufacturer and foundry services provider, today released the first of its gallium nitride (GaN) power transistors for a wide range of high frequency applications including mobile base station, defense and space communications systems. TriQuint also announced opening the industry's first GaN Foundry service for customers with circuit designs intended for production starts in September, 2008.

New two-stage HBT products from former WJ unit provide complete RF solution when paired with TriQuint's high-power HV-HBT family

HILLSBORO, Ore. & ATLANTA--(BUSINESS WIRE)--TriQuint Semiconductor (Nasdaq:TQNT), a leading RF semiconductor manufacturer and foundry services provider, today announced the release of two new HV-HBT (high voltage-heterojunction bipolar transistor) devices created at TriQuint's San Jose, CA design center, formerly WJ Communications1.

Research paper presented at IEEE MTT-S International Microwave Symposium 2008

ATLANTA, June 18 /PRNewswire-FirstCall/ -- RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today unveiled a 400W high power amplifier (HPA) that demonstrates the exceptional performance characteristics of RFMD's internally developed gallium nitride (GaN) process technology. The 400W GaN HPAs are designed for air traffic control radar and ship-borne or ground-based pulsed S-band surveillance radar applications.

Industry first also incorporates new FastWave(TM) microcontroller technology

ATLANTA, June 17 /PRNewswire-FirstCall/ -- RF Micro Devices, Inc. (Nasdaq: RFMD), a global leader in the design and manufacture of high-performance semiconductor components, today released the industry's first 5.8 GHz ISM band transceiver with an integrated power amplifier.

€10.1 million project features 18 partners, including the Alcatel-Thales III-V laboratory, quantum-dot specialist Innolume and the UK's University of Sheffield

The University of Dundee is leading a team of 18 European partners that have been granted €10.1m (approx £8m, or $15.7 m) to develop a new generation of lasers for biomedical applications.

Mitsubishi Electric begins operations with 11x2-inch MOCVD system

Aachen/Germany, June 17, 2008 -- AIXTRON AG is pleased to announce another successful installation and commissioning of an MOCVD system for the production of GaN-based blue-violet lasers.

Product portfolio includes power amplifiers and front-end modules

ATLANTA--(BUSINESS WIRE)--Skyworks Solutions, Inc. (NASDAQ:SWKS - News), an innovator of high performance analog and mixed signal semiconductors enabling mobile connectivity, today introduced a product portfolio of energy management solutions for the wireless home. The company's Linear Products' business has captured several key design wins with various market leaders for automated meter reading (AMR), advanced metering infrastructure (AMI), and ZigBee (IEEE 802.15.4).

Henning Döscher from the Helmholtz Center in Berlin wins €1000 for work on III-V and silicon integration.

On June 5, 2008 the first LayTec In-situ Monitoring Award was granted to Henning Döscher for the outstanding contribution on "In-situ quantification of the surface domain structure of thin
GaP films grown on Si(100)".

SUNNYVALE, CA, Jun 12, 2008 - Finisar Corporation (NASDAQ: FNSR), a technology leader in gigabit fiber optic solutions for high-speed data networks, today announced financial results for its fourth quarter and fiscal year ended April 30, 2008.

The pioneering wide-bandgap semiconductor company launches the world's first commercially available GaN monolithic microwave integrated circuit (MMIC) amplifiers

DURHAM, N.C. -- June 12, 2008 -- Cree, Inc (NASDAQ: CREE) announces the introduction of the world's first commercially available GaN monolithic microwave integrated circuit (MMIC) amplifiers.

Low-distortion, high-power amplifier to begin sampling on August 20, with Mitsubishi aiming to manufacture 100,000 devices per month

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (President and CEO: Setsuhiro Shimomura) announced today the development of a high-power amplifier with InGaP HBT, the MGFS39E2527, for fixed-line WiMAX communication terminals in subscriber lines. The amplifier achieves top-level performance with high output power and low distortion. Sample shipment begins August 20, 2008.

Funding from US Department of Energy aims at a 50% cost and size reduction in electric propulsion inverters; Dow Corning and GeneSiC working on SiC semiconductor devices

KOKOMO, Ind., -- Delphi Corporation announced that it has been selected by the U.S. Department of Energy (DOE) to lead an industry-government team to develop the next generation propulsion inverter for hybrid vehicles. The new smaller inverter is lower cost and will be used on the next generation high-efficiency hybrid electric vehicles (HEVs) and next generation "plug-in" hybrids (PHEVs). In the longer-term, the inverter will be used for fuel cell vehicles (FCVs).

Pair of transistors yields record wideband efficiency

DURHAM, N.C., June 11, 2008 (PRIME NEWSWIRE) -- Cree, Inc (NasdaqGS:CREE - News) announces the sample release of a 90W, highly efficient GaN HEMT microwave transistor for general-purpose military and industrial applications such as electronic warfare, radar, tactical radios and EMC applications. This transistor provides superior performance over wide bandwidths compared to other technologies such as GaAs MESFET or Si LDMOSFET.

InP device supports 10 Gbit/s uplinks for consumer nodes in FTTH passive optical cable networks

Ipswich, UK, June 10, 2008 --- CIP Technologies (CIP) has released what is believed to be the first commercial reflective electro-absorption modulator. The launch provides developers of access network and other communications applications with the means to implement innovative system architectures.

Fibre Channel transceiver market expected to exceed $1.0 billion by 2010 for the first time

Glen Allen, Virginia: According to a new report from CIR, an industry analyst firm based here, the market for data communications transceivers will grow from $4.0 billion in 2008 to $13.4 billion in 2013. Additional details about the data communications report can be found at www.cir-inc.com.

New tools further add to GaN LED capacity

Aachen/Germany, June 10, 2008 -- AIXTRON AG is pleased to announce a new MOCVD
tool order from Genesis Photonics Inc., Tainan, Taiwan, a major player in the high brightness
LED market.

Sunnyvale, CA, June 9, 2008 - Infinera (Nasdaq: INFN) is introducing two new passive photonic integrated circuits (PICs) with the launch of its ILS2 line system today. Infinera's passive PICs are designed to deliver benefits similar to Infinera's existing PICs, including greater density of functionality in a smaller space, reduced power consumption, simplified manufacturing, and enhanced reliability.

Promoted from deputy director, Jean-Francois Delepau replaces Jean-Pierre Chatard, who retires from the mercury cadmium telluride detector specialist

Veurey-Voroize, France, June 6th, 2008 - Sofradir, a leading developer and manufacturer of advanced cooled infrared detectors for military, space and commercial applications, announced today the appointment of Jean-Francois Delepau as the new managing director of its subsidiary ULIS.