Cree releases 90W GaN HEMT amplifier

The new transistor, CGH40090PP, consists of a pair of GaN HEMT transistors providing over 90 watts of saturated power in a small, industry-standard Gemini ceramic-metal package. The exceptional performance of the transistor has been demonstrated in a balanced 500-MHz to 2500-MHz instantaneous bandwidth reference amplifier that offers 14 dB typical small-signal gain, 90 watts typical CW output power, and typical drain efficiencies of 55% over the entire band.

This amplifier provides the best-known efficiency in the industry for any 5:1 bandwidth amplifier over this frequency range and power level.

"The CGH40090PP is an important addition to our general-purpose GaN HEMT product family that can be used in either push-pull or balanced amplifier designs. We are especially pleased that the reference design amplifier demonstrates state-of-the-art efficiency over such a wide frequency range. It is another example of how Cree's GaN HEMT products can enable highly efficient systems for our customers -- the more efficient the amplifier, the less heat generated. This can positively impact system thermal design, cooling costs, size and weight, and DC power distribution," said Jim Milligan, director of RF and microwave products at Cree.

The CGH40090PP complements the range of Cree's broadband GaN HEMT general-purpose microwave transistors now available at power levels of 10W, 25W, 35W, 45W and 90W.