RFMD unveils 400W GaN high-power amplifier demo

In radar applications RFMD's 400W GaN HPAs operate over a frequency range of 2.9 to 3.5 GHz, from a 65V supply delivering a power gain of 10.5 dB. Placed in a thermally efficiency, ceramic hermetically sealed package measuring only 24 x 17.4 mm, the 400W GaN HPAs deliver power density and size advantages over competing silicon bipolar technologies.

Further, RFMD's GaN process technology provides a larger bandwidth at a higher operating output power than silicon bipolar while maintaining an industry-leading drain efficiency of 50 percent across the band.

Another key area of differentiation for RFMD's GaN is its reliability. In S-band radar applications HPAs are combined in larger 2.5KW "pallet" amplifier assemblies with as many as eight or more HPAs utilized in each pallet. Traveling wave tubes (TWT) technology, traditionally used in these applications, are prone to reliability issues resulting in field failures and expensive replacement costs. With a mean-time-to-failure (MTTF) goal of 1E6 hours at a 200 degrees C junction temperature, RFMD's GaN technology will deliver superior reliability, resulting in a considerably lower total cost of ownership for customers.

"RFMD is committed to delivering a portfolio of highly competitive and compelling components for the aerospace and defense (A&D) marketplace," said Jeff Shealy, vice president and general manager of RFMD's Aerospace & Defense Business Unit. "RFMD's advancements in GaN process technologies are paving the way for a broad range of components for radar and other high power applications. Additionally, our longstanding relationships in the A&D market enable RFMD to engage key customers to evaluate these state-of-the-art process technology innovations."

RFMD's Aerospace & Defense Business Unit has a proven track record of operational excellence and a demonstrated legacy of successful military programs and space program flight history. The Aerospace & Defense Business Unit delivers world-class product innovation and global customer support via multiple design and manufacturing facilities located in North America and Europe. Manufacturing facilities for military and space-level programs are equipped with complete reliability analysis labs as well as in-house screening and qualification. For more information please see www.rfmd.com/aerospacedefense.

RFMD is proud to participate at the IEEE MTT-S International Microwave Symposium 2008 and will present additional information on the 400W GaN HPAs during a technical session at WE1E-01 on Wednesday, June 18th, at 8:00 a.m.

RFMD is showcasing its industry-leading portfolio of high-performance semiconductor components at the IEEE MTT-S International Microwave Symposium 2008, June 17-19, at the Georgia World Congress Center in Atlanta, Georgia, in Booth 1311.