TranSiC backed with €2.6 million venture funding

"This investment will enable us to go from prototyping and sampling power components to our customers to qualify components and our manufacturing processes," said Bo Hammarlund, VP of Sales and Marketing and one of the company's founders. "We are also planning to use part of the funding to support more sales and marketing activities."

TranSiC develops and manufactures power bipolar junction transistors (BJTs) in Silicon Carbide, under the trademark "BitSiC". Today 20 Amperes and 6 Amperes components are available for 1200 Volts in various packages and as integrated power modules. Key advantages of the BitSiC are higher current gains and faster switching compared to silicon power bipolar junction transistors. In addition, the BitSiC chip operates well at temperatures exceeding 250°C, and this opens up for new applications after development of a suitable package technology.

Development and device fabrication is performed in the Electrum Laboratory in Kista, Sweden, where a four inch line suited to SiC device technology, is available. TranSiC has also access to excellent device characterization facilities and to testing in applications through cooperation with pilot customers.

"TranSiC is the only manufacturer world wide which ships Silicon Carbide BJT power transistors for the Hybrid-Electrical-Vehicle industry. TranSiC is way ahead of competitors which is very promising for the future," said Stefan Jakelius Investment manager at Industrifonden.