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Homogeneity Holds the Key to CIGS Cell Efficiency
July 26, 2010
Scientists at Johannes Gutenberg University Mainz (JGU) have found that gallium-rich CIGS cells are less homogeneous than indium-rich cells and hence have lower efficiencies.
Circadian offers a different take on CPV
July 20, 2010
Applying a holistic approach to concentrator photovoltaic system design, teaming up with academics to develop flexible, highly efficient, low-cost multi-junction cells and targeting different markets should spur the growth of Circadian Solar. Richard Stevenson reports.
Osram’s powerful green laser questions the benefits of semi-polar growth
July 20, 2010
Engineers at Osram Opto-Semiconductors have broken the CW output power record for a true green laser with a polar device delivering 50 mW. Their 524 nm green emitter meets the specs for laser pico projectors, which need a 50 mW source emitting between 515 nm and 535 nm to deliver 10 lm of light on a screen.
Mantech reflects its roots
July 15, 2010
Increasing GaAs fab throughout, streamlining carrier mobility measurements on pHEMT production wafers and suggesting new ways to improve the performance of this class of transistor featured in this year’s CS-Mantech. Richard Stevenson reports.
LED droop: do defects play a major role?
July 14, 2010
Theorists are proposing that density activated defect recombination (DADR) can account for droop, the decline in a nitride LED’s external quantum efficiency at high drive currents.
Uniting III-Vs and germanium for CMOS
July 14, 2010
Unleashing the high electron and hole mobilities of InGaAs and germanium in an evolutionary CMOS architecture is possible by introducing a common gate stack. This can be formed by a combination of a sulfur-based treatment and deposition of aluminum oxide, and results suggest that this process does not hamper the performance of these novel devices, says IMEC’s Thomas Hoffmann.
Is nanometer-scale III-V CMOS cool enough to rejuvenate Moore’s Law?
July 08, 2010
Scaling silicon ICs involves packing transistors closer and closer together, and this is pushing the power density on the chip towards its limit. Switching to III-V CMOS offers a promising way forward, but can this alternative technology be scaled to a few nanometers, manufactured in really high-volume and made in such a way that it has the look and feel of the silicon incumbent? Jesús del Alamo from MIT discusses the issues.
Improving efficiency through power supply
July 06, 2010
Manufacturers of compound semiconductors look for every opportunity to improve process or yield. HÜTTINGER discusses the energy supply needs for manufacturers and decide that efficiency and robustness are the main requirements for power supplies in semiconductor production.
Mesuro & TriQuint Make Sweet Music with 90% Efficiency RF Device
July 02, 2010
The collaboration has achieved record efficiencies with established GaAs RF Devices by using accurate harmonic tuning.
InSbN delivers infrared detection
July 01, 2010
InSbN photovoltaic infrared detectors offer a promising alternative to the HgCdTe incumbent by combining superior material quality with lower Auger recombination and a range of fabrication techniques.
Lamps boost output in the deep ultraviolet
June 29, 2010
The output power of deep ultraviolet LEDs needs to rise if these devices are to be employed for water and air purification and polymer curing. One way to realize this is to turn to lamps that offer a far larger emission area, according to Asif Khan, Qhalid Fareed and Vinod Adivarahan from the University of South Carolina and Nitek.
Silicon-based LEDs leap from lab to fab
June 24, 2010
Silicon offers a large, low-cost platform for making nitride LEDs, but realizing high quality epitaxy is tough due to the stress between the two materials. However, it is possible to produce the crack-free, low-defect-density films demanded by high-power LEDs by turning to a patterned substrate and a multi-layer buffer, says Lattice Power Corporation.
Research Review: PICs could benefit from square lasers
June 24, 2010
A team of researchers at the Chinese Academy of Sciences has built the first square microlasers featuring output ports on opposite corners.
Bandgaps: Think they’re constant? Think again!
June 21, 2010
The shrinkage of the fundamental bandgap near the surface of InAs and other compound semiconductors could offer a new route in bandgap engineering.
Research Review: New plane promises to aid green lasers
June 21, 2010
Researchers at the University of California, Santa Barbara (UCSB) and Mitsubishi Chemical claim to have uncovered a superior semi-polar plane for making green lasers.
Research Review: Electroluminescence exposes phase separation in AlInGaN
June 21, 2010
Scientists at West Virginia University have obtained experimental evidence of phase separation in AlInGaN layers with a few percent aluminum and indium.
Anadigics: 25 years on a roller coaster
June 21, 2010
Anadigics has packed an awful lot into its first 25 years: it has experienced the highs of pioneering 4-inch GaAs production and leading high-volume manufacturing of power amplifiers for handsets; but it has also suffered from the lows of dealing with unsustainable losses and losing market share to superior chip technology. Richard Stevenson tells the company’s story.
Compound semiconductor stocks soar during the last 12 months
June 17, 2010
Strong sales of LED backlit screens and mobile devices have led to substantial gains in the share prices of many III-V chipmakers over the last year. Richard Stevenson reports.
GaAs-based detectors extend to the far infrared
June 16, 2010
A team of French researchers claims that it has fabricated the first GaAs/AlGaAs quantum cascade detector (QCD) capable of operating at very long infrared wavelengths.
III-Vs start propelling cable services to a new level
June 15, 2010
GaAs and GaN technologies can spur high-quality delivery of advanced video, data and telephony services to the home, says TriQuint’s Chris Day.
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