Latest In the fab news
In the fab news RSS feedOclaro strengthens diode portfolio
Jun 26, 2009
A new line of diode bars is part of Oclaro's strategy to become the largest merchant supplier of high-power laser diodes.
Nitronex snubbed by RFHIC's Cree switch
Jun 18, 2009
Korean vendor says it favors performance and reliability provided by SiC substrates over silicon for GaN wireless components.
Mitsubishi retargets red lasers for projectors
Jun 15, 2009
Diodes with stable lasing at 638 nm meet the requirements of picoprojection systems.
Oclaro deal puts pressure on captive laser fabs
Jun 4, 2009 1 comment
Already able to beat vertically integrated companies on cost, Oclaro's purchase of Newport's Spectra Physics unit should further boost high-power laser diode manufacturing efficiency.
Data tool slashes process development time
Jun 2, 2009
Flexibly searching and presenting results speeds up semiconductor process research and transfer through to manufacturing.
Lumileds set to redefine its shades of white
May 20, 2009
Following years of rapid technological progress, the US LED manufacturer is increasing its focus on customer needs.
High volume LED makers reach for the lasers
May 13, 2009
A laser scriber system vendor says diamond-tipped tools will become too expensive with increasing substrate sizes.
Luminus Devices cashes in on big chips
May 12, 2009
With customary concerns about yield apparently under control, the growing LED manufacturer is focused on meeting burgeoning demand.
EPIR weds CdTe and multi-junction solar cells
May 6, 2009
Metamorphic structures are set to be used in concentrated photovoltaic systems produced with collaborator Sunovia, including in a 20 MW deployment.
RFMD prepares GaN foundry and solar
May 5, 2009
Partnerships with NREL on concentrated photovoltaics, and a variety of customers on high power RF are set to bring new business to the company's Greensboro fabs.
Latest In the fab features
In the fab features RSS feedEpistar's chips plug and play
Jun 15, 2009
Conventional LEDs that are used for solid-state lighting have to be connected to an AC-to-DC converter. But this bulky power supply impacts efficiency and reliability, and can be discarded by turning to Epistar's AC-LEDs that feature on-chip rectification circuits, says Carson Hsieh.
Nitronex targets military radios
May 18, 2009
Military and emergency services are looking for very-wide-bandwidth radios with exceptional reliability, minimal weight and low cost. One component that can help to meet these needs is Nitronex's GaN HEMT power amplifier, claim Pradeep Rajagopal and Ray Crampton.
PA makers seek module standard
May 11, 2009
JEDEC standards offer the assurance that high-volume electronics manufacturers are producing quality goods, but they are not all well suited to RF chips. Andy Extance learns how the GaAs industry plans to resolve its qualification issues.
What is the best substrate for GaN?
May 11, 2009
IQE's Bedwyr Humphreys argues that GaN grown on 100 mm SiC is the only commercial solution for GaN RF products, while GaN grown on silicon continues to search for a niche.
Planar regrowth simplifies photonic integration of InP chips
Apr 20, 2009
Photonic integrated circuits are notoriously difficult to make, but the combination of HVPE and MOCVD can substantially simplify the fabrication of monolithic transceivers, routers and waveform generators on an InP platform, says a multinational research team.
Electrical discharge machining promises high-quality, lower-cost substrates
Apr 14, 2009
Wire electrical discharge machining is a versatile, economic approach to boule processing. Its small kerf width means that it wastes substantially less material than the incumbent technology – the wire saw – and no microcracks are produced during processing, explain Dinesh Rakwal and Eberhard Bamberg from the University of Utah.
Cree gets set for MOSFET launch
Feb 16, 2009
Armed with a reliable gate oxide, the SiC MOSFET is a great asset in power modules. The result is higher efficiencies and operating temperatures, which can cut solar inverter losses in half and increase the range of operation for military aircraft, explains Jim Richmond from Cree.
MBE stalwarts concentrate on emerging markets
Feb 3, 2009
Riber has set its sights on nitride component production, new classes of solar cells and organic semiconductors. Michael Hatcher visited the Parisian equipment company to find out more about its new strategic focus.
GaAs diode firms pump up competition
Feb 3, 2009
As 3S Photonics seeks to wrest 980 nm pump-laser market share from Bookham and JDSU, Andy Extance hears how all three will contest the leadership in the terrestrial and submarine optical communications component sector.
RFMD gives the BiFET a new twist
Dec 15, 2008
RF Micro Devices' BiFET technology offers a cost-effective route to extending HBT capabilities. JFETs can be created through the growth of two extra layers, an additional mask and just one more etch, say Brian Moser, William Clausen, David Vines and Walt Wohlmuth from the company.