Latest In the fab news
In the fab news RSS feedImproved bubblers smooth metalorganic flows Jul 4, 2008
If MOCVD process engineers want greater control over their vapor concentrations then they should consider our upgraded VaporStation, says Rohm and Haas.
On-wafer RF probe raises throughput Jul 3, 2008
The 12-contact Unity probe combines RF signal, logic, power and ground in-line engineering tests for frequencies up to 20 GHz, and will soon scale to 24-contacts and 80 GHz.
RFMD casts GaN in starring cable TV role Jun 26, 2008
Producing GaN HEMTs on its existing GaAs manufacturing lines means that the RF chipmaker will be shipping them in its latest cable TV modules this year.
Smallest Jazz process offers lean, green chips Jun 20, 2008
The latest 0.18 micron SiGe foundry capability offers improved integration and efficiency as the company looks forward to its future under Tower Semiconductor's ownership.
MMIC amps make a small noise for Ommic Jun 19, 2008
The latest GaAs chips for wireless infrastructure from the European foundry use its PHEMT process to combine high linearity and low noise figures.
Toshiba's GaN plan targets 'PA Porsche' mantle Jun 18, 2008
The Japanese company hopes high-power devices, such as the market-leading HEMT that it's bringing into production, will enable it to succeed in a tight RF GaN market.
Tegal eyes acquisitions in tough market Jun 17, 2008
Semiconductor equipment vendor Tegal Corporation says that its strong finances put it in a position to take advantage of weakened competitors who are feeling the strain.
Defects targeted for InGaN laser improvement Jun 9, 2008
Better control of crystal quality is "strictly necessary" to improve blue laser diode reliability, finds an extensive study by laser manufacturer Panasonic and a team at the University of Padova.
SAFC scales up precursor delivery Jun 2, 2008
The chemical company is helping high-volume LED manufacturers automate the flow of reagents into their deposition tools.
CrystalQ targets sapphire bottleneck May 23, 2008
The sapphire crystal growth industry has gained another player, with its eye on improving substrate supply for LED and RF chip manufacturers.
Avago claims smallest RF amplifier package May 20, 2008
"WaferCap" can now roll directly out of the company's GaAs fab and offers improved high-volume manufacturing for high-frequency RF products.
End of the line for Tempe GaAs fab May 13, 2008
After Skyworks bought Freescale's business producing power amplifiers for cellphones, the former Motorola fab’s remaining work is moved to foundries.
Hybrid cars drive TranSiC switch development May 13, 2008
Increased die-size and a freewheeling Schottky diode are refining the SiC chip maker's transistors to meet the needs of hybrid electric engine electronics.
IPG back on track with diode laser ramp May 7, 2008
The fiber laser specialist says that it has solved the manufacturing problems that hit laser yields in its MBE fab towards the close of 2007.
InP transistor shifts phase from test to telecom May 6, 2008
Customers have been quick to employ the resolution and bandwidth of GigOptix's HBT in applications beyond those it was originally intended for.
Bookham's tunable lasers hit capacity barrier Apr 30, 2008
Troubles with the laser maker's flagship line mean it faces an unappealing quarter of flat overall sales and further cost cutting.
Veeco profits as new tools gain fab acceptance Apr 29, 2008
With its latest systems for high-throughput wafer production finding their feet in high-brightness LED wafer fabs, Veeco's III-V equipment division records steep growth.
Caracal seeks buyer as Navy contract dries up Apr 28, 2008
Despite filing for bankruptcy, the SiC wafer specialist is hopeful that its advanced technology and commercial customer base will attract a buyer.
Beijing’s cellphone district cuts RFMD’s costs Apr 17, 2008
The GaAs power amplifier maker is moving test operations closer to its customer base and has received its first orders for a new product line made at the same site.
III-V-on-Si start-up promises cheaper solar cells Apr 15, 2008
4Power’s trials have shown that the lab-based processes for making economical multi-junction solar cells can be transferred to 200 mm silicon wafers.