Latest In the lab news
In the lab news RSS feedBuried photonic crystals boost LED emission Jul 7, 2008
Deeply entrenched silica lattices hold the key to producing photonic crystal LEDs that maintain electrical performance while improving light extraction, say South Korean scientists.
'Excitonic integrated circuit' is a first Jun 30, 2008
Device used excitons to switch beams of light
Tiny green laser targets mobile projectors Jun 27, 2008
Researchers in Korea believe that their tiny green laser ticks all the boxes for mobile projection applications.
High-power SLED delivers broad spectrum Jun 24, 2008
A superluminescent LED has for the first time been engineered to exhibit high output power as well as a broadband emission spectrum.
Dilute nitride closes in on telecom demands Jun 12, 2008
Perfect annealing conditions hold the key to fabricating room-temperature single-mode GaInNAs lasers operating at 1.5 microns.
ZnO allows m-plane GaN growth on sapphire Jun 5, 2008
Using a closely lattice-matched buffer, Chinese researchers have demonstrated HVPE growth of non-polar GaN epilayers on economical substrates.
IMEC makes crack-free GaN on 8-inch silicon Jun 3, 2008
Aixtron's 300 mm wafer reactor and new substrates from silicon specialist MEMC Electronic Materials yield high-quality AlGaN/GaN.
Dual integration aims for 100Gb/s economy May 30, 2008
British firm CIP is playing a central role in a pan-European effort to combine high-functionality monolithic InP chips with hybrid silica-on-silicon integration for future optical communications.
Hybrid chip improves GaN switch efficiency May 28, 2008
Combining a MOSFET with a HEMT and adding a state-of-the-art gate electrode makes for a MOS-HEMT that ticks most of the performance boxes for GaN power electronics.
Buried structure set to lower 100 Gb/s costs May 27, 2008
Encapsulating an AlGaInAs laser in semi-insulating InP helps make high-efficiency, rapid, directly-modulated optical communication possible for Fujitsu.
Latest In the lab features
In the lab features RSS feedOsram explores the route to high-performance greens Jul 7, 2008
Why are green LEDs so inefficient? Is it the result of poor carrier injection, high Auger loss, strong internal fields, or simply poor material quality, asks Osram's Matthias Peter.
Research Review Jun 30, 2008
Electroluminescence exposes subcells...InGaAs laser breaks into telecom territory...Voids aid AlN formation.
Comb lasers target connectivity Jun 23, 2008
Today's quantum-dot lasers operate in niche markets. However, significant laser shipments could soon materialize thanks to Fabry-Perot designs that offer the ideal source for optical links in next-generation computer systems, according to Alexey Kovsh and Greg Wojcik from Innolume.
Sodium flux scales up GaN crystals Jun 16, 2008
Adding sodium to a gallium melt that is fed with nitrogen gas promises to scale up miniscule GaN crystals to 4 inch diameters, according to Osaka University's Fumio Kawamura, Yasuo Kitaoka, Yusuke Mori and Takatomo Sasaki.
III-Vs and Ge look to help CMOS Jun 9, 2008
Scaling down silicon CMOS nodes is getting harder and harder. However, help is on the horizon in the form of III-V and germanium MOSFETs that can improve the performance of n- and p-type channels, say Matthias Passlack, IMEC's Marc Heyns and Iain Thayne from the University of Glasgow.
Research Review May 27, 2008
Non-polar face fits for Toyota MOSFET...GaAs HEMTs provide hope for detectors...Lateral quantum wells challenge phosphors.
Research Review Apr 1, 2008 1 comment
GaSb VCSELs execute CW operation…Heterogeneous bonds get to grips with QCLs…Native oxide increases cut-off frequency.
Vertical conduction strategy cranks up UV LED output power Apr 1, 2008
Vertical conduction ramps up the drive currents and output powers of ultraviolet LEDs. Such devices will soon enter the market through Nitek Inc, where they will take on bulky high-voltage UV lamps for use in purification and curing applications, says Asif Khan from the University of South Carolina.
InGaAs revolutionizes III-V MOSFETs Apr 1, 2008 2 comments
Several decades of research have failed to boost the currents in inversion-mode III-V MOSFETs. However, massive improvements are possible by combining indium-rich InGaAs channels with high-k dielectrics grown by atomic-layer-deposition, explains Peide Ye from Purdue University.
Rohm shoots for a green diode laser Apr 1, 2008
Rohm believes that it is impossible to make conventional nitride laser diodes that emit in the green, so it has turned its attention to non-polar equivalents. Is this strategy starting to pay dividends? Richard Stevenson investigates.