Latest In the lab features
In the lab features RSS feedOsram explores the route to high-performance greens Jul 7, 2008
Why are green LEDs so inefficient? Is it the result of poor carrier injection, high Auger loss, strong internal fields, or simply poor material quality, asks Osram's Matthias Peter.
Research Review Jun 30, 2008
Electroluminescence exposes subcells...InGaAs laser breaks into telecom territory...Voids aid AlN formation.
Comb lasers target connectivity Jun 23, 2008
Today's quantum-dot lasers operate in niche markets. However, significant laser shipments could soon materialize thanks to Fabry-Perot designs that offer the ideal source for optical links in next-generation computer systems, according to Alexey Kovsh and Greg Wojcik from Innolume.
Sodium flux scales up GaN crystals Jun 16, 2008
Adding sodium to a gallium melt that is fed with nitrogen gas promises to scale up miniscule GaN crystals to 4 inch diameters, according to Osaka University's Fumio Kawamura, Yasuo Kitaoka, Yusuke Mori and Takatomo Sasaki.
III-Vs and Ge look to help CMOS Jun 9, 2008
Scaling down silicon CMOS nodes is getting harder and harder. However, help is on the horizon in the form of III-V and germanium MOSFETs that can improve the performance of n- and p-type channels, say Matthias Passlack, IMEC's Marc Heyns and Iain Thayne from the University of Glasgow.
Research Review May 27, 2008
Non-polar face fits for Toyota MOSFET...GaAs HEMTs provide hope for detectors...Lateral quantum wells challenge phosphors.
Research Review Apr 1, 2008 1 comment
GaSb VCSELs execute CW operation…Heterogeneous bonds get to grips with QCLs…Native oxide increases cut-off frequency.
Vertical conduction strategy cranks up UV LED output power Apr 1, 2008
Vertical conduction ramps up the drive currents and output powers of ultraviolet LEDs. Such devices will soon enter the market through Nitek Inc, where they will take on bulky high-voltage UV lamps for use in purification and curing applications, says Asif Khan from the University of South Carolina.
InGaAs revolutionizes III-V MOSFETs Apr 1, 2008 2 comments
Several decades of research have failed to boost the currents in inversion-mode III-V MOSFETs. However, massive improvements are possible by combining indium-rich InGaAs channels with high-k dielectrics grown by atomic-layer-deposition, explains Peide Ye from Purdue University.
Rohm shoots for a green diode laser Apr 1, 2008
Rohm believes that it is impossible to make conventional nitride laser diodes that emit in the green, so it has turned its attention to non-polar equivalents. Is this strategy starting to pay dividends? Richard Stevenson investigates.
GaN Schottky barrier diodes threaten to overturn SiC Apr 1, 2008
Manufacturers of switch-mode power supplies can get exactly what they want with Velox's GaN-on-sapphire Schottky diodes: the performance of SiC at a fraction of the price. Michael Murphy, Linlin Liu, Milan Pophristic and Boris Peres detail the advantages of the technology.
Research Review Mar 17, 2008
QCLs stretch to shorter wavelengths...Atom probe uncovers gross inhomogeneity...Low pressures boost growth rate of 4H-SiC
AlInN mirrors spur VCSEL progress Mar 17, 2008
Electrically pumped GaN VCSELs are just round the corner, thanks to the development of AlInN-based distributed Bragg mirrors and ring-shaped intracavity contacts, says EPFL's Eric Feltin.
Groovy nitrides could light up silicon Mar 17, 2008
Devising a monolithic approach to making a silicon light source has been fraught with difficulty, but the fabrication of lattice-matched GaNAsP lasers on CMOS-compatible substrates is showing a great deal of promise, according to Wolfgang Stolz from the University of Marburg and NAsP III/V.
III-Vs squeeze the terahertz gap Mar 17, 2008
The terahertz gap is on the way out. Transistors are speeding up, quantum cascade lasers are stretching farther into the microwave domain and the window that's left is shrinking, reports Richard Stevenson.
Pyramids produce crack-free UV lasers Mar 17, 2008
Epiwafer cracking hampers UV-laser diode production, but this problem can be avoided by inserting triangular-shaped GaN pyramids on top of the sapphire substrate, says Harumasa Yoshida from Hamamatsu Photonics.
Research Review Feb 11, 2008
AlN mask simplifies laser fabrication light…Slanted gate boosts output power density…Silicon-on-insulator platform brightens LEDs
Quantasol exploits quantum effects Feb 11, 2008 2 comments
Photon recycling and quantum wells enhance single-junction solar cell efficiencies and will boost tandem cell performance to triple-junction levels, say Quantasol's Kevin Arthur and Keith Barnham.
Electrolysis: a surprising method for scaling GaN crystal growth? Feb 11, 2008
Conventional crystal growth methods don't work well for manufacturing GaN, but it is possible to produce small particles by electrolysis. With some minor changes this relatively fast process might be scaled to the manufacture of GaN substrates, says Sandia National Laboratories' Karen Waldrip.
Four-pronged attack promises ultra-high efficiency lighting Feb 11, 2008
Ultra-high efficacy white-light sources can be built by carefully mixing efficient blue, green, yellow and red LEDs, say Sandia National Laboratories researchers. Richard Stevenson investigates.