Latest In the lab news
In the lab news RSS feedBuried photonic crystals boost LED emission Jul 7, 2008
Deeply entrenched silica lattices hold the key to producing photonic crystal LEDs that maintain electrical performance while improving light extraction, say South Korean scientists.
'Excitonic integrated circuit' is a first Jun 30, 2008
Device used excitons to switch beams of light
Tiny green laser targets mobile projectors Jun 27, 2008
Researchers in Korea believe that their tiny green laser ticks all the boxes for mobile projection applications.
High-power SLED delivers broad spectrum Jun 24, 2008
A superluminescent LED has for the first time been engineered to exhibit high output power as well as a broadband emission spectrum.
Dilute nitride closes in on telecom demands Jun 12, 2008
Perfect annealing conditions hold the key to fabricating room-temperature single-mode GaInNAs lasers operating at 1.5 microns.
ZnO allows m-plane GaN growth on sapphire Jun 5, 2008
Using a closely lattice-matched buffer, Chinese researchers have demonstrated HVPE growth of non-polar GaN epilayers on economical substrates.
IMEC makes crack-free GaN on 8-inch silicon Jun 3, 2008
Aixtron's 300 mm wafer reactor and new substrates from silicon specialist MEMC Electronic Materials yield high-quality AlGaN/GaN.
Dual integration aims for 100Gb/s economy May 30, 2008
British firm CIP is playing a central role in a pan-European effort to combine high-functionality monolithic InP chips with hybrid silica-on-silicon integration for future optical communications.
Hybrid chip improves GaN switch efficiency May 28, 2008
Combining a MOSFET with a HEMT and adding a state-of-the-art gate electrode makes for a MOS-HEMT that ticks most of the performance boxes for GaN power electronics.
Buried structure set to lower 100 Gb/s costs May 27, 2008
Encapsulating an AlGaInAs laser in semi-insulating InP helps make high-efficiency, rapid, directly-modulated optical communication possible for Fujitsu.
Polaritons promise more efficient LEDs May 19, 2008
Particles that are 'half-matter and half-light' may find applications in optoelectronics devices, says a team from Crete.
Nitride LED pumps polymer laser May 6, 2008
A polymer laser that is pumped by a blue LED could provide a low-cost, tunable and compact source of visible light.
Smoothing process boosts green LED output May 1, 2008
The secret to reducing out-diffusion of indium from quantum wells is adding an extra trimethylindium-ammonia step during epiwafer growth.
Swedes push InAs nanowires for transistors Apr 29, 2008
Funds flow into the Lund University team that is making devices by wrapping nanowires in heterostructures that include high-k dielectrics.
EU laser team readies cancer surgical strike Apr 22, 2008
Backed strongly by industry and the European Commission, the "Brighter" project is delivering powerful 635 and 650 nm diodes for medical applications as the first of its many goals.
GaN VCSEL delivers electrically pumped lasing Apr 21, 2008
GaN VCSELs are now producing electrically pumped lasing thanks to superlattice structures in the n-type mirror and indium tin-oxide coating of the aperture.
LED brightness doubles in a flash Apr 9, 2008 3 comments
A researcher from Ehime University in Japan hopes that pulsed LED operation, which fools us into thinking that we’re looking at brighter light, can be used in residential lighting.
II-VI on InP has cascade laser potential Apr 1, 2008
In early-stage research, a US team demonstrates electroluminescence from a novel II-VI-on-InP system, suggesting that a new type of laser based on the unusual combination of materials might be possible.
Warmer whites top DOE's wish list Mar 25, 2008
The research focus on high-performance LEDs will now shift towards more warm-white LED and high-efficacy luminaire development, says a US Department of Energy report.
Buried platinum gate delivers HEMT record Mar 19, 2008
Asian researchers demonstrate an InGaAs/InAs-channel device with improved RF performance, in a logic-focused collaboration with Intel.