Aixtron receives repeat order from Sumitomo
Japanese group to boost production of GaN-on-SiC devices to meet demand for RF data transfer applications
Deposition equipment company Aixtron has delivered a CRIUS MOCVD system with 4-inch wafer configuration to Japanese group Sumitomo Electric Device Innovations (SEDI).
SEDI wants to boost the production of GaN-on-SiC devices for RF data transfer applications including for the upcoming 5G wireless mobile network. The system has been put into operation in the fourth quarter 2016.
SEDI has longstanding experience with Aixtron's Close Coupled Showerhead technology which enables easy scalability.The new reactor is equipped with optional features such as dynamic gap adjustment, ARGUS in-situ temperature control and the EpiCurve TT metrology system. The ARGUS monitoring device provides full wafer mapping in real time for optimum control of the growth process. Extended flexibility is enabled by allowing the adjustment of the process gap between the showerhead and the substrate.
SEDI already has a range of GaN HEMT devices on offer for radar, mobile phone base-stations, and general applications. These GaN-on-SiC HEMT devices enable high power amplification at operating frequencies of up to 14 GHz RF.