+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

SMI completes gallium oxide radiation testing


Company tests to see whether Ga2O3 power devices could be a good candidate for NASA's power management and distribution systems

Structured Materials Industries (SMI) has successfully finished initial studies of the radiation hardness of Ga2O3-based power devices in accordance with a NASA SBIR Phase I funded project (NASA Award No. NNX17CG70P).

The Ga2O3 films were grown on bulk doped and undoped Ga2O3 and other substrates in one of SMI's in-house MOCVD systems.

Total Ionisation Dose (TID) and Single Event Effect (SEE) were used as radiation hardness testing metrics.

The radiation hardness testing was conducted to determine whether the Ga2O3 based power devices were a good candidate for NASA's Power Management and Distribution (PMAD) systems among other applications. Potential applications include power devices such as diodes and transistors that may be used in areas like power rectification, and RF mixing, among many others.

"With the development of Ga2O3 power devices, we thought it important to further the determination of the space worthiness/applicability of Ga2O3 based devices. NASA agreed and funded this important capability investigation. Testing actual devices made this project all the more relevant.", commented Serdal Okur, principal investigator for SMI SBIR Ga2O3 related projects.

He added: "We tested different combinations of device material properties; such as orientation, doping levels, substrate dopant, and crystal growth technique, including epilayers grown by MOCVD. Fabricated devices included Schottky barrier diodes. The variables were strategically chosen to critically evaluate the potential of Ga2O3based power device performance under different radiation exposures."

The testing was carried out in stages during the Phase I project. SMI says it was a significant milestone in the overall assessment of Ga2O3 radiation hardness.

Okur added: "The Phase I work of this project was implemented and successfully completed in a 6-months period, which is very impressive considering the amount of knowledge acquired from this study. We are also grateful for the contributions from all the personnel at various universities, research laboratories, and government agencies that were involved in this project."

Connecting the Compound Semiconductor Industry

The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.

Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.

To discover our sponsorship and exhibition opportunities, contact us at:

Email: info@csinternational.net
Phone: +44 (0)24 7671 8970

To register your place as a delegate, visit: https://csinternational.net/register

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: