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Integra announces C-band GaN/SiC power transistor

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Fully-Matched, 5 to 6 GHz RF power transistor offers 25 watts of power for C-band, continuous wave applications

Integra Technologies , a designer and supplier of high-power RF power transistors and RF power modules, has announced a new, fully-matched, GaN/SiC, RF power transistor that is suitable for C-band, continuous wave (CW) applications.

IGT5259CW25 is fully matched to 50-ohms, operates at the instantaneous frequency range 5.2 - 5.9 GHz, and offers a minimum of 25 W of output power at 36V drain bias. It features 12 dB of gain, and 48 percent efficiency at CW conditions. (Negative gate voltage and bias sequencing are required when using this transistor.) IGT5259CW25 is a newly released design.

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