Mitsubishi Develops Ultra-Wideband 5G GaN Amp
Digitally controlled amp is designed for high capacity communication and low power consumption
Mitsubishi Electric has announced the development of an ultra-wideband, digitally controlled GaN amplifier compatible with a range of sub-6GHz bands focused on 5G systems.
With a power efficiency rating of above 40 percent, the amplifier is expected to contribute to large-capacity communication and reduce the power consumption of mobile base stations, according to the company.
Mitsubishi says its new GaN amplifier uses an advanced load modulation circuit with two parallel GaN transistors. The circuit expands the bandwidth of load modulation, a key factor for the amplifier’s high-efficiency operation, for wideband (1.4–4.8GHz) operation.
Digitally controlled input signals for amplifier realise high-efficiency load modulation of above 40 percent over 110 percent of the fractional bandwidth. Digital control employs learning function based on Maisart (Mitsubishi Electric's AI creates the State-of-the-ART in technology).
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