Sumitomo ramps GaN-on-SiC production with Aixtron tool
AIX G5+ Planetary MOCVD platform supports capacity RF device ramp-up for RF using 6 inch wafers
Deposition equipment firm Aixtron SE has announced that Japanese group Sumitomo Electric Device Innovations, Inc. (SEDI) has ordered an AIX G5+ tool with 8x6-inch wafer configuration in order to expand the production capacity of GaN-on-SiC radio frequency (RF) devices for wireless applications such as radars, satellite communication and base stations for the rapidly expanding 5G mobile networks. The system is scheduled for delivery in 2019.
SEDI has already been successfully relying on Aixtron’s Showerhead technology for the production of 4-inch GaN epitaxial wafers. The progressive deployment of 5G networks but also the introduction of new technologies like beamforming is foreseen to drive a rapid upturn in demand steering the adoption of more efficient 6-inch substrates for RF applications on Aixtron’s proven Planetary systems.
By selecting the AIX G5+ Planetary MOCVD platform, SEDI relies on the tool-of-record for GaN-based HEMTs warranting not only superior process yields but also enabling lowest cost of ownership of the market. The system has an unmatched reputation for wafer uniformity and precise process control, which is especially important for device production on cost-intensive silicon carbide wafers. The new reactor is equipped with an EpiCurve TT metrology system as well as with Auto-Feed Forward and P400 UV Pyrometer Close Loop temperature control.
SEDI already has a range of GaN HEMT devices on offer for radar, mobile phone base-stations, and general applications. These GaN-on-SiC HEMT devices enable high power amplification at operating frequencies of 28-40 GHz and beyond as required by new 5G communication standards.