+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

ON Semi Announce New 650V SiC MOSFETs

News

Superior switching and improved reliability deliver power density improvements in a variety of challenging applications

ON Semiconductor has announced a new range of SiC MOSFET devices for demanding applications where power density, efficiency and reliability are key considerations. By replacing existing silicon switching technologies with the new SiC devices, designers will achieve significantly better performance in applications such as electric vehicles, on-board chargers, solar inverters, server power supply units, telecoms and uninterruptible power supplies.

ON Semiconductor’s new automotive AECQ101 and Industrial grade qualified 650V SiC MOSFETs are based upon a new wide bandgap material that provides superior switching performance and improved thermals when compared to silicon. This results in improved efficiency at the system level, enhanced power density, reduced electromagnetic interference (EMI) and reduced system size and weight.

The new generation of SiC MOSFETs employ a novel active cell design combined with advanced thin wafer technology enabling best in class figure of merit Rsp (Rdson*area) for 650 V breakdown voltage. The NVBG015N065SC1, NTBG015N065SC1, NVH4L015N065SC1 and NTH4L015N065SC1 have the lowest Rdson (12 mOhm) in the market in D2PAK7L and To247 packages.

This technology is also optimised around energy loss figure of merits, optimizing performance in automotive and industrial applications. An internal gate resistor (Rg) allows more flexibility to designers eliminating the need to slow down devices artificially with external gate resistors. Higher surge, avalanche capability and short circuit robustness all contribute to enhanced ruggedness that delivers higher reliability and longer device lifetimes.

Commenting on the new releases, Asif Jakwani, senior vice president of the Advanced Power Division at ON Semiconductor said: “In modern power applications such as on-board chargers (OBC) for EV and other applications including renewable energy, enterprise computing and telecom, efficiency, reliability and power density are constant challenges for designers.

"These new SiC MOSFETs significantly improve performance over the equivalent silicon switching technologies, allowing engineers to meet these challenging design goals. The enhanced performance delivers lower losses that enhance efficiency and reduce thermal management needs as well as reducing EMI. The end result of using these new SiC MOSFETs is a smaller, lighter, more efficient and more reliable power solution.”

CS International to return to Brussels – bigger and better than ever!


The leading global compound semiconductor conference and exhibition will once again bring together key players from across the value chain for two-days of strategic technical sessions, dynamic talks and unrivalled networking opportunities.


Join us face-to-face on 18-19 April 2023

  • View the agenda.
  • 3 for the price of 1. Register your place and gain complementary access to TWO FURTHER industry leading conferences: PIC International and Power Electronics International.
  • Email info@csinternational.net  or call +44 (0)24 7671 8970 for more details.

Register

Fairview releases waveguide frequency multipliers
Zuken and CSA Catapult present R&D results
Chips per car to rise to over a thousand
CML launches low power GaAs pHEMT gain blocks
European pilot line for perovskite tandem PVs
Transphorm opens GaN application lab in China
Sivers Semi signs $16.4 million satcoms deal
Meeting demand for purified graphite
Indium Precision Au-Based Die-Attach Preforms at SPIE Photonics West
ROHM and BASiC Semiconductor form a strategic partnership
Indium Introduces LED Paste for Advanced Mini/MicroLED Applications
SiC to service buses and trucks
STMicroelectronics and Soitec cooperate on SiC substrate manufacturing technology
Midsummer signs four LOI’s for 224 MW of thin film panels
OLED display technology in smartphones on the rise
Innoscience signs global deal with Richardson RFPD
Onsemi ramps SiC production
Fairview releases temperature-compensated amps
Kyocera develops novel GaN laser chip
BluGlass partners with Ganvix on green VCSELs
Scantinel lands €10M for next gen LiDAR
Researchers control light quanta with sound waves
Rohm, Mazda, and Imasen sign SiC e-Axle deal
HKUST team develops way to couple III-V and silicon
Veeco appoints Lena Nicolaides to board
Filtronic opens design centre in Manchester
Hunan Sanan secures $524M SiC order from NEV brand
BluGlass shows feasible reliability of GaN laser diodes
Perovskite-CIGS tandem is over 21 percent efficient
Silanna UV targets nitrate sensing applications
BorgWarner to invest $500M in Wolfspeed
UK orders Nexperia to divest Newport Wafer Fab
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: