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Navitas Opens World's First EV GaN Chip Design Centre

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Company will work in partnership with OBC, DC-DC and traction system companies

Navitas Semiconductor has announced the opening of a new electric vehicle (EV) design centre, further expanding into higher-power GaN markets.

The design centre, based in Shanghai, China, hosts a team of power system designers with capabilities across electrical, thermal and mechanical design, software development, and complete simulation and prototyping capabilities. EV customers will be supported worldwide by the new team, from concept to prototype, through to full qualification and mass production.

Industry-expert, Hao Sun, the new senior director of the Shanghai design centre, said: "The design centre will develop schematics, layouts, and firmware for full-function, productisable EV power systems. Navitas will work in partnership with OBC, DC-DC and traction system companies to create innovative, world-class solutions with the highest power density and highest efficiency to propel GaN into mainstream eMobility."

High-power 650V GaN ICs tailored to EV applications were sampled to EV customers in December. A 6.6kW OBC concept was displayed at the recent Xiaomi Portfolio Demo Day, and is shown at CES '22.

"The Navitas EV team has rich talent and proven experience delivering power systems," said Charles Zha, VP and GM of Navitas China. "EMobility is an exciting expansion market for GaN, with an estimated $250 potential content per EV. Market-by-market, Navitas is making swift progress into higher-power applications, like EV, data centre and solar."

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