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Magazine Feature
This article was originally featured in the edition:
Volume 27 Issue 1

Beneq ALD enables next generation of power devices


Driven by fast-growing demand in electric vehicles, consumer electronics and renewable electricity modern power devices are evolving rapidly in terms of materials as well as design and process technologies. For example, Wide Bandgap SiC and GaN devices have the fundamental advantage of low on-resistance x

high breakdown voltage. Increasingly advanced deposition technologies are required across the board. The most critical are the dielectrics to be grown or deposited at the surface of the semiconductor, either as part of the active MOS or MIS structure or as a surface passivation layer.

ALD holds unique advantages over other deposition methods such as PECVD
Unrivalled conformality, sub-nanometer thickness control and uniformity
Broad range of materials, including Al2O3, AlN, HfO2, Ta2O5, SiO2, Si3N4, TiN, TiO2, ZnO, and metals etc.
Greater electrical, morphological, optical, and mechanical tuneability
High quality at low temperature - typically between 50–400 °C

Proprietary Beneq in-situ pre-clean and passivation is especially developed for metal and semiconductor surfaces – Silicon and compound semiconductor. In other words, ALD also differentiates by its capability to grow thin dielectrics of thermal quality at much lower temperature than thermal processes such as thermal oxidation. ALD enables low thermal budget process integration. Not only SiC and GaN devices but also mainstream MOSFET’s and IGBT benefit from the above merits enabled by advanced integrated ALD technology. Thanks to rapid advances in ALD equipment technology, throughput can now be scaled by using batch process i.e. 25 wafer batch as much as needed. Thermal batch ALD enables production-worthy throughputs (double digit) for thickness in the range of 10 to 100 nm.