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Mitsubishi ramps HEMTs for satellite receivers

The Japanese chip manufacturer will make 0.5 million low-noise GaAs HEMTs per month for use in applications including satellite broadcast receivers.

From October this year, Japanese chip giant Mitsubishi Electric is preparing to manufacture its new GaAs HEMTs in large volumes.

The high-gain transistors are said to be ideal for low-noise amplifiers operating at 18-20 GHz, and have been ordered for use in satellite broadcast receivers and very small aperture terminal (VSAT) systems.

"The recent launch of the Ka-band systems is expected to increase demand for [GaAs] HEMTs, because of the expansion of transmission capacity over current satellite communication systems," said the company.

"Mitsubishi Electric responded to this demand by creating a high-gain version of a micro-X package HEMT." The new HEMT has a gain of 13.5 dB, an improvement of 3 dB over the previous generation.

The Tokyo-based company will manufacture 0.5 million of the new HEMTs each month from October onwards. Samples are priced at $0.90.

According to Mitsubishi Electric, the need for faster data links to carry the latest digital and high-definition broadcasts is one of the key reasons behind the need for new high-frequency Ka-band systems.

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