News Article
Cree and RFMD demo GaN for wireless in Hawaii
With much of the wireless infrastructure industry at the International Microwave Symposium in Honolulu, Cree and RF Micro Devices take the opportunity to show off their latest GaN-based products.
RF Micro Devices and Cree are both showcasing their latest GaN-based components for wireless infrastructure applications at the International Microwave Sympoisum, which is taking place in Hawaii this week.
Cree says that its new CGH40025 general-purpose device is the smallest 25 W transistor available in the industry, delivering 14 dB of gain and a drain efficiency of 55 percent when used in a 3.6 GHz amplifier.

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The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.
Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.
To discover our sponsorship and exhibition opportunities, contact us at:
Email: info@csinternational.net
Phone: +44 (0)24 7671 8970
To register your place as a delegate, visit: https://csinternational.net/register
Register