Diodes come in high and wide at Laser show
Chip makers have launched a host of products to coincide with this week s Laser "“ World of Photonics exhibition in Munich, Germany.
Alfalight has unveiled an 808 nm diode laser which targets pumping applications, providing 2 W of power and 52 percent peak power conversion efficiency.
The Madison, Wisconsin based company, whose 750 to 1100 nm lasers are usually made from InGaAs/(In)GaAsP, highlights that its new diode can maintain a stable wavelength over a temperature range of up to 40°C.
By contrast, chipmaker nLight proudly proclaims that its 790-830 nm laser bar combines high brightness with high power, producing 60 W of power in all operational modes.
The Vancouver-based company says that the versatile new 30% fill factor bar will serve laser-pumping, industrial, medical and defense uses.
nLight is also showcasing a high-brightness 635 nm 0.75W single emitter diode for display and medical end applications, and “Pearl”, an umbrella platform for high power fiber-coupled lasers.
The company, which grows its laser chips on InP and GaAs wafers, says improvements of all of its range of proprietary diodes, are thanks to a combination of its proprietary extended life technology (called nXLT), AuSn solder and expansion-matched submount.
JDSU has a 10W pulsed fiber laser (PFL) for material processing on show, and a blue frequency-converted diode laser which it is targeting at medical and semiconductor diagnostics.
The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.
Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.
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