Diodes come in high and wide at Laser show
Chip makers have launched a host of products to coincide with this week s Laser "“ World of Photonics exhibition in Munich, Germany.
Alfalight has unveiled an 808 nm diode laser which targets pumping applications, providing 2 W of power and 52 percent peak power conversion efficiency.
The Madison, Wisconsin based company, whose 750 to 1100 nm lasers are usually made from InGaAs/(In)GaAsP, highlights that its new diode can maintain a stable wavelength over a temperature range of up to 40Â°C.
By contrast, chipmaker nLight proudly proclaims that its 790-830 nm laser bar combines high brightness with high power, producing 60 W of power in all operational modes.
The Vancouver-based company says that the versatile new 30% fill factor bar will serve laser-pumping, industrial, medical and defense uses.
nLight is also showcasing a high-brightness 635 nm 0.75W single emitter diode for display and medical end applications, and “Pearl”, an umbrella platform for high power fiber-coupled lasers.
The company, which grows its laser chips on InP and GaAs wafers, says improvements of all of its range of proprietary diodes, are thanks to a combination of its proprietary extended life technology (called nXLT), AuSn solder and expansion-matched submount.
JDSU has a 10W pulsed fiber laser (PFL) for material processing on show, and a blue frequency-converted diode laser which it is targeting at medical and semiconductor diagnostics.