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Fujitsu unveils longest-lasting GaN HEMTs

Analysis of electron trapping in the Japanese company's capped GaN HEMT shows how to push its lifetime to over a million hours.

Fujitsu has made GaN HEMTs that will operate for 100 years at 200°C, opening the way for the devices to be used in increasingly demanding applications.

Results presented at the 2007 IEEE MTT-S International Microwave Symposium in Hawaii claim the devices are "the most reliable in the world".

The Japanese IT and communications company is the first to achieve the million-hour record with a 50 V drain voltage by pinch-off testing, the most severe reliability test.

Fujitsu says planned applications for its ultra-reliable HEMTs include satellite communications, cellular base stations and WiMAX, and other wireless technologies.

Delivery of the reliability record hinged upon Fujitsu s investigations of the link between gate leakage current and reliability, and the relationship between the gate leakage current, crystal quality and device structure.

Researchers grew a device with an optimized structure, using Fujitsu s proprietary n-type GaN cap layer, and higher-quality materials.

The HEMT was consequently less affected by the fields from current leakage, and testing it at 300 deg C gave the impressive extrapolated reliability data.

"In order for GaN HEMTs to be used as a high-power, high-voltage endurance devices," explained a Fujitsu spokesman, "they must maintain high reliability "“ a long lifespan "“ as it is anticipated that they must withstand harsh usage conditions, including high temperatures and high drain voltages."

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