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Semiconductor mass production at 28 nanometres starts development

Research into semiconductor mass production at 28 nanometres has been announced by Samsung.
A newly formed semiconductor research and development (R&D) centre has started investigating transistor structures and materials to develop sub-28 nanometre production.

Samsung Electronics has announced that technologies under research include three-dimensional transistors and extreme ultra violet lithography, in order to enable early access to leading-edge process equipment.

Mass production at 45 nanometres is already underway at Samsung Foundry, which is preparing for 32 and 28-nanometre production.

Semiconductor research at the centre will support the development of advanced process nodes in order to minimise power consumption but allow feature-rich devices to be used by designers "to create innovative next-generation mobile and high-performance system-on-a-chip devices", said Kinam Kim, executive vice-president and general manager of Samsung Electronics semiconductor R&D centre.

The company added that the new semiconductor research would complement advances made with the IBM Technology Alliance.

Sub-28 nanometre production would enable a larger number of transistors to be fitted on to an integrated circuit of the same size.

This is the principle governed by Moore s law, a theory which states that the number of transistors on an integrated circuit will approximately double every two years without the circuit needing to increase in size.ADNFCR-2855-ID-19445365-ADNFCR
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