News Article
Intel votes on III-V-on-silicon as the future chip
Intel Corp. director of technology strategy Paolo Gargini said that the inclusion of III-V materials to silicon is a 2015 transistor option that could deliver either 3x the performance of silicon at the same power consumption or deliver the same performance as silicon at one-tenth the power consumption.
Gargini, also chairman of the International Technology Roadmap for Semiconductors, stressed in a presentation at the Industry Strategy Symposium Europe of the company's progress in adding compound semiconductor layers to silicon as a means of continuing scaling and reducing power consumption. However, integration of a thin compound semiconductor transistor channel with conventional silicon manufacturing would be the key to adoption.
Full story at EE Times http://www.eetindia.co.in/ART_8800598407_1800007_NT_d8b218b3.HTM

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The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.
Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.
To discover our sponsorship and exhibition opportunities, contact us at:
Email: info@csinternational.net
Phone: +44 (0)24 7671 8970
To register your place as a delegate, visit: https://csinternational.net/register
Register