Intel votes on III-V-on-silicon as the future chip
Intel Corp. director of technology strategy Paolo Gargini said that the inclusion of III-V materials to silicon is a 2015 transistor option that could deliver either 3x the performance of silicon at the same power consumption or deliver the same performance as silicon at one-tenth the power consumption.
Gargini, also chairman of the International Technology Roadmap for Semiconductors, stressed in a presentation at the Industry Strategy Symposium Europe of the company's progress in adding compound semiconductor layers to silicon as a means of continuing scaling and reducing power consumption. However, integration of a thin compound semiconductor transistor channel with conventional silicon manufacturing would be the key to adoption.
Full story at EE Times http://www.eetindia.co.in/ART_8800598407_1800007_NT_d8b218b3.HTM
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