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Researchers develop green laser using GaN compound semiconductors

Scientists in Germany and Japan have developed a method for creating a true green laser using GaN compound semiconductors.
A green laser has been developed using gallium nitride (GaN) compound semiconductors as the basis for the technology, it has been revealed.

The race to develop a true green laser has stymied researchers for decades, but new techniques being carried out at laboratories in Japan and Germany have finally succeeded - at least in the lab.

In the past, in order to achieve a green laser technicians had to undergo certain procedures to alter the colour of the laser - such as frequency doubling - but this resulted in a significant loss in energy efficiency.

However, the fact GaN compound semiconductors have now been induced to emit light in the green spectrum means manufacturers will be able to create more efficient green lasers in the future, although the road to commercial production is a still likely to be a long one.

Elsewhere, research carried out by IMS Research recently forecast that the silicon carbide (SiC) and GaN power device market has an important three years ahead.

It claimed SiC and GaN power devices could help the value of the market rise to $160 million (£103 million) by 2013.
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