News Article
Researchers develop green laser using GaN compound semiconductors
Scientists in Germany and Japan have developed a method for creating a true green laser using GaN compound semiconductors.
A green laser has been developed using gallium nitride (GaN) compound semiconductors as the basis for the technology, it has been revealed.
The race to develop a true green laser has stymied researchers for decades, but new techniques being carried out at laboratories in Japan and Germany have finally succeeded - at least in the lab.
In the past, in order to achieve a green laser technicians had to undergo certain procedures to alter the colour of the laser - such as frequency doubling - but this resulted in a significant loss in energy efficiency.
However, the fact GaN compound semiconductors have now been induced to emit light in the green spectrum means manufacturers will be able to create more efficient green lasers in the future, although the road to commercial production is a still likely to be a long one.
Elsewhere, research carried out by IMS Research recently forecast that the silicon carbide (SiC) and GaN power device market has an important three years ahead.
It claimed SiC and GaN power devices could help the value of the market rise to $160 million (£103 million) by 2013.
The race to develop a true green laser has stymied researchers for decades, but new techniques being carried out at laboratories in Japan and Germany have finally succeeded - at least in the lab.
In the past, in order to achieve a green laser technicians had to undergo certain procedures to alter the colour of the laser - such as frequency doubling - but this resulted in a significant loss in energy efficiency.
However, the fact GaN compound semiconductors have now been induced to emit light in the green spectrum means manufacturers will be able to create more efficient green lasers in the future, although the road to commercial production is a still likely to be a long one.
Elsewhere, research carried out by IMS Research recently forecast that the silicon carbide (SiC) and GaN power device market has an important three years ahead.
It claimed SiC and GaN power devices could help the value of the market rise to $160 million (£103 million) by 2013.
Connecting the Compound Semiconductor Industry
The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.
Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.
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The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.
Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.
To discover our sponsorship and exhibition opportunities, contact us at:
Email: info@csinternational.net
Phone: +44 (0)24 7671 8970
To register your place as a delegate, visit: https://csinternational.net/register
Register
