Riber announces MBE machine sale
Compound semiconductor developer Riber has announced the sale of an MBE412 III-V system to CNRS Toulouse System Analysis and Architecture Laboratory (LAAS).
The machine utilises molecular beam epitaxy (MBE) to offer the ability to develop large substrate III-V compound semiconductors.
Future projects mapped out by LAAS include the use of the machine to create new devices for the fields of nano-photonics, quantum well and box components, advanced laser sources and photonic crystal laser diodes.
Riber noted that the purchase of one of its MBE412 III-V machines by one of the leading European developers of micro-nanotechnologies points to the firm's position as being an expert in its field.
According to Riber, MBE is a key process in the early phase development of compound semiconductors.
MBE-grown materials have been used to research a range of products, including gallium arsenide, indium phosphide, a range of nitrides and silicon alloy (SiGe, SiC) compound semiconductors.