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Institute providing insight into GaN

The many achievements of the Institute of High Pressure Physics in Warsaw have been highlighted.
The Institute of High Pressure Physics in Warsaw has highlighted the work carried out by its scientists in the development of gallium nitride-based (GaN) compound semiconductors over the last 30 years.

Institute director Professor Sylwester Porowski said in an interview with Polish Market Online that work at the institute has focused on delivering defect-free GaN crystals for many years. In addition, it has worked on the development of applications for these crystals, including in metal-organic chemical vapour deposition, molecular beam epitaxy and in laser diode systems.

"Green is the only colour missing in the RGB (red, green and blue) laser colour triangle. Without green it is impossible to show natural colours through projectors, laser displays or TVs," he commented.

However, Professor Porowski is confident this situation will soon be rectified, as scientists are on the brink of making true green lasers a reality.

The institute was founded in 1958 by academician LF Vereshchagin. It originally dedicated its work to improvements for the diamond industry in the USSR in the 1960s, before being declared an official scientific institute in 2004.
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