Cree Extends Portfolio to 150mm Silicon Carbide Substrates
The significant size advancement of single crystal SiC substrates from 100mm to 150mm will enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.
Cree has achieved a major breakthrough in the development and wide scale commercialization of Silicon Carbide (SiC) technology with the demonstration of high quality, 150mm SiC substrates with micropipe densities of less than 10/cm(2). The current Cree standard for SiC substrates is 100mm diameter material.
SiC is a high-performance semiconductor material used in the production of a broad range of lighting, power and communication components, including light-emitting diodes (LEDs), power switching devices and RF power transistors for wireless communications. The significant size advancement of single crystal SiC substrates to 150mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.
"Cree's achievement of 150mm SiC substrates further demonstrates Cree's leadership in SiC materials technology," said Vijay Balakrishna, Cree Materials product line manager. Steve Kelley, Cree chief operating officer, added, "We expect that 150mm substrates can reduce device cost, boost manufacturing output and expand our product range".
Cree is one of the companies leading the LED lighting revolution and setting the stage to obsolete the incandescent light bulb through the use of energy-efficient, environmentally friendly LED lighting. Its product families include LED fixtures and bulbs, blue and green LED chips, high-brightness LEDs, lighting-class power LEDs, power-switching devices and radio-frequency/wireless devices. Its products are used in general illumination, backlighting, electronic signs and signals, variable-speed motors, and wireless communications.