News Article
Kopin Awarded $750,000 To Develop Advanced Nitride Electronic Materials
The Phase II Contract was award through the Missile Defense Agency (MDA) and will leverage Kopin's established capability in Group III-Nitrides
Kopin Corporation, a leading producer of Heterojunction Bipolar Transistor (HBT) wafers for smart phones and other mobile devices, has received a two-year, Phase II Small Business Innovative Research (SBIR) contract.
The contract will cover the development of Aluminum Indium Nitride-based high electron mobility transistors (AlInN HEMTs). The $750,000 award through the Missile Defense Agency (MDA) will leverage Kopin's established capability in Group III-Nitrides to enhance the performance and manufacturability of AlInN materials.
"This SBIR program by MDA validates the potential of the AlInN material system for high-performance electronic devices," stated John C.C. Fan, Kopin's President and CEO. "Our long-term objective is to commercialize AlInN-based electronic materials, which parallels our highly successful GaAs HBT wafer business. It is part of Kopin's strategy to leverage our expertise in III-V materials and nanoengineering to offer technology-differentiated solutions to our customers."
Wayne Johnson, Kopin's Vice President of Technology said, "The AlInN material system has shown great promise to extend the power and frequency capability of GaN-based HEMTs, but it is a challenging material to produce."
“During the Phase I effort, we demonstrated encouraging results in AlInN/GaN heterostructures including record-low sheet resistance. The goals of Phase II will involve optimization of the AlInN HEMT structures and fabrication of HEMT devices for X-band electronics applications in collaboration with leading-edge GaN foundries," concluded Johnson.
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