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Compound Semiconductor Magazine announces Industry Awards 2011 at the CS Europe Conference

The inaugural Awards were presented at the CS Europe Conference which was attended by 150 industry professionals.

On 22nd March 2011, Compound Semiconductor Magazine hosted the “CS Europe Conference” at the Hilton Hotel, Frankfurt, Germany.

Attended by 150 industry professionals, the conference was a resounding success. With a dual track conference session, pioneering companies from around the globe outlined the best opportunities for the compound semiconductor industry, and what has to be done to seize them.

The meeting kicked-off with a plenary talk from the MBE pioneer Klaus H. Ploog, and was followed by presentations from TriQuint Semiconductor, Dow Corning, IQE, TranSiC, EV Group, MicroGaN GmbH, OSRAM Opto, Modulight, JDSU, Edwards, Yole Développement , RFMD, OMMIC, Oxford Instruments Plasma Technology , Oclaro, UMS, and NXP. 

As part of the conference, Compound Semiconductor Magazine presented “The CS Industry Awards 2011” which recognised success and development along the entire value chain of the Compound Semiconductor industry from research to completed devices, with a focus on the people, processes and products that drive the industry forward. The CS Industry Award Winners were shortlisted from 60 entries globally. A six week campaign through the online and print platforms of Compound Semiconductor saw 1500 industry specialists vote for their winners.

The winners are:

SUBSTRATES & MATERIAL AWARD : Sumitomo Electric Industries, Ltd. for the world’s first 6-inch diameter GaN substrates.

The Japanese firm has been producing GaN for many years, and began with the manufacture of 2-inch material , before proceeding to manufacture larger diameter GaN substrates. Gallium nitride based materials enable better thermal dispersion than allowing LED manufacturers to reduce chip sizes and increase output power. Sumitomo anticipates that its 6-inch GaN substrates will also be used in power devices because of the excellent thermal conductivity, electric responsiveness and breakdown voltage of devices made using these materials.

EPIWAFER PROCESSING AWARD : EV Group for its EVG 850TB/DB: temporary bonding/debonding systems.

EV Group’s cost-effective method of temporary bonding of a device wafer to a carrier wafer prior to thinning was recognised for allowing device wafer thickness to be further reduced, enabling enhanced device performance. Additionally, temporary bonded wafers can be handled and processed like standard bulk wafers. Adding only two process steps, temporary bonding and debonding, allows thin wafer processing on standard equipment in any existing fab.

 Richard Stevenson, Consulting Editor of CS Magazine presents CS Industry award to EV Group

METROLOGY, TEST AND MEASUREMEANT AWARD : Cascade Microtech, Inc. for its BlueRay DS

Cascade Microtech’s innovative BlueRay DS probe station allows testing double-sided substrates typically performed in a laboratory with the ability to meet the throughput and reliability requirements of a production environment. The BlueRay DS is a universal platform for a multitude of applications in semiconductor test such as LED, MEMS, and optical devices and has made testing backside-emitting LEDs possible.

Cascade was awarded for being the first company to offer a modular wafer probing solution that grows with the process requirements of the development lab to the production fab.

MOST INNOVATIVE DEVICE AWARD : RF Micro Devices, Inc. for the RFRD6460 PowerSmart power platform

RFMDs RFRD6460 3G multi-band, multimode PowerSmart Power Platform is targeted at smartphones and mobile internet devices. The product was awarded for providing extensive flexibility and customisation, extensive battery life, all in a small footprint whilst accelerating original equipment manufacturer’s time to market.

Furthermore, the RFRD6460 contains the industry’s first RF configurable power core, designed to seamlessly merge with its VSWR-tolerant, quadrature patented power amplifier technology.

FAB MANAGEMENT AWARD : Cree Inc. for 150-mm SiC substrates

Cree, Inc. was recognised for a major breakthrough in the development and wide scale commercialisation of high quality 150-mm SiC substrates with micropipe densities of less than 10/cm². The current Cree standard for SiC substrates is 100-mm diameter material. The significant size advancement of single crystal SiC substrates to 150-mm can enable cost reduction and increased throughput, while bolstering the continued growth of the SiC industry.

R & D AWARD : TriQuint for its advanced GaN research and development

After TriQuint received a multi-year DARPA research award of $16.2 million, the firm proceeded to develop new generation GaN based circuits through the Nitride Electronic NeXt-Generation Technology (NEXT) program.  Much of the NEXT program is focused on developing devices that can be used in harsh environmental conditions experienced in aerospace and defence applications. There have been many new developments and these could set the stage for revolutionary new designs. TriQuint hopes that the leap in technology resulting from NEXT program research will be looked back upon as a significant turning point in the evolution of semiconductor engineering.




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