RFMD’s new GaN wideband pulsed PA
Using an advanced high power density GaN semiconductor process, these high-performance amplifiers achieve high output power, high efficiency and flat gain over a broad frequency range in a single package. High terminal impedance enables wideband operation and minimizes overall PCB real estate. This matched GaN transistor is packaged in a hermetic, flanged ceramic package that provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies.
RF3928
With wideband operation of 2.8GHz to 3.4GHz, the module utilises advanced GaN HEMT and heat-sink technology. Its evaluation board layout is optimised for 50Ω operation and the device has a small signal gain of 12dB and a drain efficiency of 52%.
The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.
Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.
To discover our sponsorship and exhibition opportunities, contact us at:
Email: info@csinternational.net
Phone: +44 (0)24 7671 8970
To register your place as a delegate, visit: https://csinternational.net/register
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