EpiGaN ramps up production on Aixtron reactors
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Belgium-based GaN epiwafer maker and IMEC spin-off, EpiGaN, has commissioned two new MOCVD systems from Aixtron for the commercial production of 6-inch GaN-on-Silicon wafers.
Producing wafers for power and RF electronics devices, EpiGaN will also use the systems to develop next generation 200mm GaN-on-Silicon wafers. The systems can operate multiple 6" or in 8" configurations.
Aixtron installed and commissioned the reactors at EpiGaN’s purpose-built, state-of-the-art facility in Research Campus Hasselt, which opened in May this year.
“After several years of efficient collaboration with Aixtron towards GaN-on-Si, it was evident that their Close Coupled Showerhead systems perfectly suit our needs," explains Dr Marianne Germain, CEO of EpiGaN. "[We've] worked with Aixtron's CCS MOCVD systems at IMEC and have jointly published numerous papers on GaN-on-Silicon development."
"There are challenges ahead for high voltage 200mm GaN-on-Si, but we are confident that the combination of our enduring expertise and the leading edge equipment and process technology will deliver all our objectives rapidly and efficiently,” she adds.
EpiGaN's founders have pioneered GaN on Si technology, and were the first to demonstrate GaN HEMT's on 6" and 8" silicon substrates.
The company is also participating in the EU project HiPoSwitch aiming to develop more compact and powerful energy converters. Activities cover the entire value chain from GaN-on-Si epiwafers over GaN power device development to industrial application.
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