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Nantong Tongfang chooses Veeco for GaN-on-Silicon LED research

The Chinese firm selected Veeco's MOCVD system for gallium nitride-on-silicon HBLED research
Nantong Tongfang Semiconductor has received a Veeco's TurboDisc K465i MOCVD System for research of GaN-on-silicon high brightness LEDs. The system was delivered to Tongfang’s new LED Technology Centre in Nantong, China.



Veeco K465i reactor

Liu Gang, General Manager of Nantong Tongfang Semiconductor, says, “We successfully utilise Veeco’s MOCVD systems in our current production of GaN-on-sapphire based LEDs. It was the logical choice to select Veeco for our new research into GaN-on-silicon based LED devices. This is going to be a significant focus of our future R&D investment over the next few years.”

Jeff Hawthorne, Veeco’s Senior Vice President, MOCVD, adds, "Many of our LED customers are developing GaN-on-silicon technology, which offers the potential to accelerate the adoption of solid-state lighting by reducing the cost of making LEDs without compromising end-product quality. We are glad to support Tongfang in their research efforts.”

The K465i features high film quality and low defects, which are key for GaN-on-silicon processing. The reactor also incorporates Veeco's Uniform FlowFlange technology for superior uniformity and excellent run-to-run repeatability. Low maintenance TurboDisc technology enables highest system availability, excellent particle performance and high throughput. Veeco says the K465i provides ease-of-tuning for fast process optimisation on wafer sizes up to 8 inches and fast tool recovery time after maintenance.

Nantong Tongfang Semiconductor Co., Ltd., a subsidiary of the publicly traded Tsingua Tongfang Co., Ltd., produces and develops LED modules and LED lighting products.

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