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GSU selects Meaglow plasma source

The system will be used for the development of group III-nitride compound semiconductor materials
Meaglow has announced that Georgia State University (GSU) has received shipment of its patent pending hollow cathode plasma source.

The installed Meaglow plasma source extends the growth processing parameter space of GSUs presently utilised in low-pressure MOCVD reactors. This upgrades the tool so that it can produce type III-nitride materials under normal low-pressure growth conditions.

Meaglow hollow cathode plasma source

Meaglow's plasma source fosters a plasma-assisted gas phase and surface chemistry that provides a new path for the integration of dissimilar materials for ternary and quarternary III-nitride alloys.

Research in Dietz's group at GSU will study the migration enhanced afterglow chemistry and growth dynamics for III-nitride epilayers and nanocomposites. They will support Meaglow's effort in commercialising the growth technology.



Meaglow hollow cathode in use

Meaglow has previously applied its hollow cathode plasma source technology via its migration enhanced afterglow technique in the deposition of high indium content InGaN. More recently, the source has been demonstrated in a yellow LED in the green gap.

Meaglow is now focused on commercialising its hollow cathode plasma technology, and is fielding inquiries from partners interested in plasma source solutions for MBE or any surface modification to materials.

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