+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
News Article

Raytheon GaN technology is ideal for defence applications

The firm has been awarded for its affordable and effective gallium nitride RF based technology
Raytheon was honoured by the Office of the Secretary of Defence (OSD) for successful completion of a Defence Production Act (DPA) Title III Gallium Nitride (GaN) production improvement program.

This culminated in more than a decade of government and Raytheon investment in GaN RF (radio frequency) circuit technology.

"Raytheon has been at the forefront in advancing the maturity and production-readiness of GaN technology, and this recognition reflects our mutual collaboration and achievement, having worked closely with our customers," says Joe Biondi, vice president of Advanced Technology for Raytheon's Integrated Defence Systems business. "The limitless benefits of GaN in performance and reliability deliver enhanced capability and affordability to our customers."

Raytheon also demonstrated that the reliability of their GaN technology exceeded the requirement for insertion into production military systems. This maturation of GaN resulted in a Manufacturing Readiness Level (MRL) production capability of "8," the highest level obtained by any organisation in the defence industry for this technology. MRL is a measure used by the OSD and many of the world's major companies to assess the maturity of manufacturing readiness.

GaN technology significantly extends the war fighter's reach into the battle space by increasing radar ranges, sensitivity and search capabilities. Through the Title III program, GaN yield was improved by more than 300 percent and cost was reduced more than 75 percent for Monolithic Microwave Integrated Circuits.

An MMIC is a type of integrated circuit device that operates at microwave frequencies (300 MHz to 300 GHz). These devices typically perform functions such as microwave mixing, power amplification, low noise amplification and high frequency switching.

GaN technology also supports a reduction in the size of a system's antenna, which provides flexibility, improves transportability and reduces acquisition and lifecycle costs without sacrificing performance.

Connecting the Compound Semiconductor Industry

The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.

Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.

To discover our sponsorship and exhibition opportunities, contact us at:

Email: info@csinternational.net
Phone: +44 (0)24 7671 8970

To register your place as a delegate, visit: https://csinternational.net/register

Search the news archive

To close this popup you can press escape or click the close icon.
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.

Please subscribe me to:


You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: