News Article
Soraa unveils first GaN on GaN LED packaged in a silicon WLP
This LED has a gallium nitride substrate, triangular shaped chip, simplified epitaxial structure and an original silicon-based wafer level packaging
Soraa has recently released the first GaN on GaN LED in a 50W halogen equivalent MR16 lamp with several new features.
Soraa used the GaN characteristics like the optical transparency and the high electrical and thermal conductivity to create a unique vertical structure for these LEDs. The layers deposited by epitaxy are very thin.
Soraa GaN on GaN LED packaged in a silicon WLP
A high current density per square cm is obtained, estimated at 120A / sq cm. The Soraa LEDs have a triangular shape to limit the internal reflection of the light and thus increase the light extraction.
An original silicon package with a multilayer mirror is used to increase the light extraction of the LED lamp.
More details are described in the report, "LED : SORAA : Tri-LED & Lightchip," available from System Plus Consulting.
Source: Yole Développement (www.yole.fr)
Soraa used the GaN characteristics like the optical transparency and the high electrical and thermal conductivity to create a unique vertical structure for these LEDs. The layers deposited by epitaxy are very thin.
Soraa GaN on GaN LED packaged in a silicon WLP
A high current density per square cm is obtained, estimated at 120A / sq cm. The Soraa LEDs have a triangular shape to limit the internal reflection of the light and thus increase the light extraction.
An original silicon package with a multilayer mirror is used to increase the light extraction of the LED lamp.
More details are described in the report, "LED : SORAA : Tri-LED & Lightchip," available from System Plus Consulting.
Source: Yole Développement (www.yole.fr)
