Microsemi releases 650V SiC devices for high-power
The firm's latest silicon carbide diode products can be used in aerospace, welding, battery charging and other high-power industrial applications
Microsemi Corporation, a provider of power semiconductors, has expanded its SiC Schottky product family.
The new line of 650V diodes are targeted at high-power industrial applications including solar inverters.
Advanced wide bandgap semiconductors such as SiC offer many advantages to power electronics and systems designers.
Benefits of SiC over silicon include a higher breakdown field strength and higher thermal conductivity.
These attributes allow designers to create products with better performance characteristics encompassing zero reverse recovery, temperature independent behaviour, higher voltage capability and higher temperature operation to achieve new levels of performance, efficiency and reliability.
"Microsemi's SiC power semiconductors are ideal for power electronic designers looking to improve system efficiency," says James Kerr, senior product marketing manager for Microsemi's Power Products Group.
"Silicon carbide is a game-changing technology for many of our customers. With in-house fabrication capabilities, a comprehensive portfolio of SiC solutions and a roadmap that includes several new SiC products, Microsemi is positioned to capitalise on this growing market opportunity."
Microsemi's new 650V SiC Schottky diode product portfolio includes:
-- APT10SCD65K (650V, 10A, TO-220 package)
- APT10SCD65KCT (650V, 10A, common cathode TO-220 package)
- APT20SCD65K (650V, 20A, TO-220 package)
- APT30SCD65B (650V, 30A, TO-247 package)
Microsemi's new 650V SiC Schottky diodes are in production now.