+44 (0)24 7671 8970
More publications     •     Advertise with us     •     Contact us
*/
News Article

IHS: GaN-on-Si LEDs to rocket from 1 to 40 percent marketshare

Apart from the fact that silicon substrates are cheap, 8-inch CMOS semiconductor companies will find it relatively inexpensive to shift to growing gallium nitride-on-silicon LEDs. This will make GaN-on-silicon increasingly popular over LEDs grown on sapphire and SiC substrates
The penetration of GaN-on-silicon wafers into the LED market is forecast to increase at a compound annual growth rate of 69 percent from 2013 to 2020.

By this time they will account for 40 percent of all GaN LEDs manufactured, according to a new report from IHS.

In 2013, 95 percent of GaN LEDs will be manufactured on sapphire wafers, while only 1 percent will be manufactured on silicon wafers. The growth in the manufacturing of GaN-on-silicon LEDs between 2013 and 2020 will take market share from both sapphire and SiC wafers.

The figure below shows the GaN-on-silicon LED market share outlook in terms of revenue for the packaged LED market.



“Manufacturing large ingots made from sapphire is difficult, whereas silicon wafers are available from 8 inches up to 12 inches and are generally cheaper and more abundant,” says Dkins Cho, senior analyst for lighting and LEDs at IHS. “There is a large pre-existing industry for silicon-based manufacturing that is leveraged to create economies of scale and reduce the cost of an LED.”

Repurposing manufacturing facilities to accommodate the shift toward GaN-on-silicon LEDs is generally accepted to require minimal investment. Companies that previously manufactured CMOS semiconductors already own legacy 8-inch CMOS fabrication units that can be converted for LED production with a small modification. These companies already have in-house expertise and technology associated with silicon-based processes.

“Many of the CMOS semiconductor manufacturers already have excellent inspection tools, unlike traditional LED companies,” Cho explains. “This could help increase their process yield through in-situ monitoring. However, it is unlikely the repurposing will happen overnight; instead we forecast a shift during the coming years.”

 

 

Connecting the Compound Semiconductor Industry

The 13th CS International conference builds on the strengths of its predecessors, with around 40 leaders from industry and academia delivering presentations that fall within five key themes: Ultrafast Communication; Making Headway with the MicroLED; Taking the Power from Silicon, New Vectors for the VCSEL, and Ultra-wide Bandgap Devices.

Delegates attending these sessions will gain insight into device technology, find out about the current status and the roadmap for the compound semiconductor industry, and discover the latest advances in tools and processes that will drive up fab yields and throughputs.

To discover our sponsorship and exhibition opportunities, contact us at:

Email: info@csinternational.net
Phone: +44 (0)24 7671 8970

To register your place as a delegate, visit: https://csinternational.net/register

Register
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: