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EPC eGaN FETs in National Instruments` Multisim software

The gallium nitride SPICE chips are incorporated in NI's Multisim 13.0 software, which is designed to improve power system efficiency and reduce final product size and development time
Efficient Power Conversion Corporation (EPC) says its enhancement mode GaN transistors (eGaN FETs) SPICE models have been included in the latest version of National Instruments’ Multisim circuit simulation and design software.

The Multisim toolkit enables engineers to easily calculate, change and sweep critical component parameters in advanced power conversion system applications.

“The EPC component models in Multisim 13.0 are now leveraged by thousands of engineers to improve power system efficiency, reduce final product size, reduce development cost, or a combination of all three," says Mahmoud Wahby, product manager at National Instruments.

"Multisim is also a leading circuit design tool in both academia and with companies that are excited about basing their power electronics designs on cutting edge components. We are delighted to have EPC’s industry-leading GaN transistors included in Multisim and are looking forward to the future releases of eGaN FETs and their continued integration within Multisim,” he continues.

According to Alex Lidow, EPC’s co-founder and CEO, “In order to make eGaN FETs easy to use, we developed these devices to behave very much like silicon power MOSFETs, but with greatly enhanced high frequency capability. With the inclusion of our products in Multisim SPICE models, National Instruments provides user-friendly tools that make a significant impact in how easy it is to design with our eGaN devices. These device models will enable rapid time-to-market of power conversion systems taking full advantage of our high performance GaN power transistors.”



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