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Trifortune buys Aixtron tool for GaN LED growth

The 56 x 2 inch reactor will be used to grow gallium nitride on alternative substrates
Jiangsu Trifortune Electronic Technology, China, has ordered an AIX G5 HT system to develop GaN based high brightness LEDs.

The Aixtron system will be equipped to handle 56 x 2 inch wafers per run and will be installed at Trifortune’s R&D centre.

AIX G5 HT reactor

The developed process will be transferred to mass production in the Jiangsu area upon successful completion of the research.

Hu, Technical Head of Trifortune, comments, “We are developing GaN processes to grow LEDs on substrates that offer some advantages compared to the well-established sapphire substrates. To compete in the HB-LED market, there is a real need to achieve the maximum yield in our manufacturing process, so that products with better performance in lumen per dollar can be established."

Hu adds, "The AIX G5 HT system is widely acknowledged as having the top yields in LED mass production, along with excellently repeatable performance at high growth rates.”

Andreas Toennis, Aixtron Chief Technology Officer, continues, “We are very pleased to contribute to Trifortune’s success and to share our comprehensive expertise in optimisation of epitaxy yields with them.”

Trifortune Electronic Technology Co. Ltd, headquartered in Jintan City, China, was founded in May 2013. In phase one of its strategic business plan the company made an initial investment into a preproduction demo line located at Shahe, Beijing.

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