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Qorvo's new GaAs process aims high

90nm pHEMT technology targets high frequency amplifiers for 100G+ applications

Qorvo has announced a new GaAs pHEMT technology that it claims provides higher gain/bandwidth and lower power consumption than competing semiconductor processes.

Qorvo's TQPHT09 is a 90nm pHEMT process that supports Qorvo's next-generation optical product portfolio. This new process is said to be ideal for next-generation high frequency, high performance amplifiers required for 100G+ linear applications.

Manufactured in Qorvo's GaAs fabrication facility in Richardson, Texas, TQPHT09 is the newest offering in the company's well-established pHEMT process portfolio. Qorvo's TQPHT09 serves as the basis for several new optical modulator driver products including the TGA4960-SL, the company's most advanced quad-channel 100G modulator driver. 

The TGA4960-SL is available in the CFP2 form factor for Metro and long haul applications, and is also well suited for upgrading the 100G linear dual-channel drivers for line card applications. It is optimised for high performance, low power dissipation and high channel-to-channel isolation, and is packaged in a 14.0 x 8.0 x 2.6mm SMT module, the smallest footprint in the industry.

James Klein, president of Qorvo's Infrastructure and Defense Products group, said, "Qorvo continues to invest and develop the most competitive semiconductor process technologies in the industry, enabling best-in-class components for next-generation products. Qorvo's new 90 nm pHEMT process exemplifies our leadership in providing components for high-speed market applications with the quality, reliability and dependable source of supply our customers expect."

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