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Pasternack Introduces High Power GaN Amplifier

Generates 100W saturated output power from 0.7 to 2.7 GHz

Pasternack, a US provider of RF, microwave and millimeter wave products, has introduced the PE15A5033F high power GaN amplifier to its range of amplifiers designed for applications such as electronic warfare, radar, communications, and test and measurement.

The PE15A5033F generates 100W typical saturated output power over a broad frequency range that covers 0.7 to 2.7 GHz.  This class A/AB design is unconditionally stable and uses highly efficient GaN technology for superior linear performance that supports a variety of input signal formats including CW, AM, FM, PM, and Pulse with power added efficiency (PAE) of 30 percent  typical.

Additional key performance features of this high power amplifier include 45 dB minimum small signal gain, +/- 1.5 dB typical gain flatness @ Psat and an impressive harmonic suppression level of -20 dBc typical.  To ensure highly reliable thermal management, the amplifier module incorporates a heatsink and cooling fan that maintains an optimum baseplate temperature of 0degC to +50degC, with automatic shutdown capability at 85degC.  

The package assembly supports SMA-female RF connectors at the input and output ports and a D-Sub connector with control functions that include +30 Vdc bias, current monitoring and TTL logic blanking.  Another primary advantage of this amplifier is its rugged design platform capable of withstanding harsh environmental conditions including humidity, altitude, shock and vibration.

"Our PE15A5033F high power amplifier utilises GaN technology for efficient broadband performance and it incorporates thermal management protection to ensure reliable operation essential for a number of applications including military radar and communications. This model is part of our extensive line of high power amplifiers that are available in stock for immediate shipment," said Tim Galla, active device product manager at Pasternack.



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