Info
Info
News Article

Mitsubishi, Nokia Bell Labs And UC San Diego Develop Ultra-fast GaN Envelope-tracking Amplifier

News

Modulation bandwidth of 80MHz is four times that of other envelope tracking devices

Mitsubishi Electric, Nokia Bell Labs and the Center for Wireless Communications at UC San Diego have developed an ultra-fast GaN envelope-tracking power amplifier (PA)  for next next-generation wireless base stations. 

Believed to be a world first, the PA supports a modulation bandwidth up to 80MHz, which is four times wider than the signals reportedly used in other envelope-tracking power amplifiers. 

Technical details will be presented during the IEEE MTT International Microwave Symposium (IMS) 2017, which will be held in Honolulu, Hawaii, USA from June 4 to 9.

To help meet the demand for increasing wireless capacity, mobile technologies are shifting to next-generation systems that use complex modulated signals with large peak-to-average power ratio (PAPR) and extra-wide modulation bandwidth. This will require power amplifiers to operate most of the time at backed-off power levels that are well below their saturation levels. Generally, power amplifiers achieve high efficiency near their saturation power levels, but significantly degraded efficiency at backed off levels, as in the case of 4G LTE* signals (>6dB PAPR).

Envelope-tracking power amplifiers have been studied extensively as a means to enhance power-amplifier efficiency, but so far the supply-modulator circuit has been the bottleneck limiting modulation bandwidth for advanced wireless communications, such as LTE-Advanced.

The newly developed ultra-fast GaN envelope-tracking power amplifier achieves state-of-art performance thanks in part to Mitsubishi Electric's high-frequency GaN transistor technology and design innovation for the GaN supply-modulator circuit. 

Using Nokia Bell Labs' real-time digital pre-distortion (DPD) system, the power amplifier has demonstrated efficient operation even with 80MHz modulated LTE signals, the world's widest modulation bandwidth for this purpose as of May 19, 2017.

The new GaN envelope-tracking power amplifier uses Mitsubishi Electric high frequency GaN in supply-modulation circuits, which enable high-speed operation. The result is highly efficient amplification of complex signals with modulation bandwidth up to 80MHz. 

The technology achieves a world-class drain efficiency of 41.6 percent in such wide-bandwidth operation, thereby reducing base-station energy consumption while increasing wireless communication speed and capacity.

 Further, the real-time DPD system enables pre-distortion for wideband signals to correct the output signal from the power amplifier, resulting in an adjacent channel leakage ratio (ACLR) of -45dBc for LTE 80MHz signals, which satisfies the wireless communication standards. In view of its leading system-level performance, the new envelope-tracking power amplifier is believed to be a highly promising candidate for next-generation wireless base stations. 



AngelTech Live III: Join us on 12 April 2021!

AngelTech Live III will be broadcast on 12 April 2021, 10am BST, rebroadcast on 14 April (10am CTT) and 16 April (10am PST) and will feature online versions of the market-leading physical events: CS International and PIC International PLUS a brand new Silicon Semiconductor International Track!

Thanks to the great diversity of the semiconductor industry, we are always chasing new markets and developing a range of exciting technologies.

2021 is no different. Over the last few months interest in deep-UV LEDs has rocketed, due to its capability to disinfect and sanitise areas and combat Covid-19. We shall consider a roadmap for this device, along with technologies for boosting its output.

We shall also look at microLEDs, a display with many wonderful attributes, identifying processes for handling the mass transfer of tiny emitters that hold the key to commercialisation of this technology.

We shall also discuss electrification of transportation, underpinned by wide bandgap power electronics and supported by blue lasers that are ideal for processing copper.

Additional areas we will cover include the development of GaN ICs, to improve the reach of power electronics; the great strides that have been made with gallium oxide; and a look at new materials, such as cubic GaN and AlScN.

Having attracted 1500 delegates over the last 2 online summits, the 3rd event promises to be even bigger and better – with 3 interactive sessions over 1 day and will once again prove to be a key event across the semiconductor and photonic integrated circuits calendar.

So make sure you sign up today and discover the latest cutting edge developments across the compound semiconductor and integrated photonics value chain.

REGISTER FOR FREE

VIEW SESSIONS

Info
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
Info
X
Info
{taasPodcastNotification}
Live Event