Info
Info
Info

II-VI Unveils Laser Diode For 3D Sensing

News

Edge emitting DFB laser diode operates at 940 nm and emit powers of more than 500 mW

II‐VI, a provider of high-power semiconductor laser components, has introduced a new edge emitting distributed feedback (DFB) laser diode for 3D sensing applications.

New applications in augmented and mixed reality are driving the rapidly growing demand for semiconductor lasers embedded in consumer devices, such as smartphones, headsets and smart glasses. II-VI’s new DFB laser diodes operate at 940 nm and emit powers of more than 500 mW enabling consumer devices to digitally reconstruct surrounding scenes in 3D using the reflected laser light.

“This latest product leverages the deep expertise that we accumulated over our 20 year legacy in GaAs lasers," said Karlheinz Gulden, general manager, II-VI Laser Enterprise. “Our customers can rely on our global design and manufacturing teams that recently demonstrated our ability to rapidly scale production of a new laser for consumer electronics, to high volumes on a vertically integrated 6 inch GaAs technology platform."

II-VI’s DFB laser diodes can be customised to achieve the optimum output power for the application. Engineering sample quantities are currently available for evaluation and design-in, as assemblies on ceramic carriers or in die form.

II-VI will showcase these products at OFC 2018.


Info
Your First Name
Your Email Address
Next »Close
 
×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in: