Microsemi Expands SiC Range
Company to show next-generation 1200 V SiC MOSFET and 700V SBDs at PCIM Europe
Microsemi will be expanding its SiC MOSFET
and SiC diode product portfolios early next quarter, including samples of its
next-generation 1200V, 25 mOhm and 80 mOhm SiC MOSFET devices;
next-generation 700 V, 50 A Schottky barrier diode (SBD) and corresponding die.
These SiC solutions, along with other
recently announced devices in the SiC SBD/MOSFET product families, will be
demonstrated June 5-7 at PCIM Europe 2018, held at the Exhibition Centre in
These next-generation SiC MOSFETs are suited for a number of applications within the industrial and
automotive markets, including hybrid electric vehicle (HEV)/EV charging, conductive/inductive
onboard chargers (OBCs), DC-DC converters and EV powertrain/traction control.
They can also be used for switch mode power supplies, photovoltaic (PV)
inverters and motor control in medical, aerospace, defence and data centre applications.
"Fast adoption of SiC solutions for
applications such as EV charging, DC-DC converters, powertrain, medical and
industrial equipment, and aviation actuation demand a high degree of
efficiency, safety and reliability on components used in such systems," said
Leon Gross, vice president and business unit manager for Microsemi's Power
Discretes and Modules business unit. "Microsemi's next-generation SiC MOSFET
and SiC diode families will include AEC-Q101 qualifications, which will insure
high reliability while ruggedness is demonstrated by high repetitive unclamped
inductive switching (UIS) capability at rated current without degradation or
According to market research firm
Technavio, the global SiC market for semiconductor applications is expected to
reach nearly $540.5 million by 2021, growing at a compound annual growth rate
(CAGR) of more than 18 percent.
The firm also forecasts the global SiC
market for automotive semiconductor applications at nearly 20 percent CAGR by
2021. Microsemi is well-positioned with these trends, with its SiC MOSFET and
Schottky barrier diode devices avalanche-rated with a high short-circuit
withstand rating for robust operation, and the capabilities necessary to enable
these growing application trends.
Microsemi says its next-generation 1200 V,
25/40/80 mOhm SiC MOSFET devices and die as well as its next-generation 1200 V
and 700 V SiC SBD devices offer customer benefits in comparison to
competing Si/SiC diode/MOSFET and IGBT solutions, including more efficient
switching at higher switching frequencies as well as higher avalanche/UIS
rating and higher short-circuit withstand rating for rugged and reliable
For example, SiC MOSFETs are developed with
an ideal balance of specific on-resistance, low gate and thermal resistances,
and low gate threshold voltage and capacitance for reliable operation. Designed
for high yield processes and low parameter variation across temperature, they
operate at higher efficiency (in comparison to Si and IGBT solutions) across
high junction temperature (175 degrees Celsius) to extend battery systems like
those in HEV/EV applications.
The newly sampling devices also offer
high gate integrity and high gate yield as verified through high
temperature reverse bias (HTRB) and time-dependent dielectric breakdown (TBBD)
tests, which are part of its AEC-Q101 qualification in progress.
Microsemi's product experts will be at the
company's booth at PCIM during show hours to demonstrate its next-generation
SiC solutions, and in particular the company's recently announced next-generation
1200 V, 40 mOhm SiC MOSFET device and 1200V, 10/30/50A SiC diode products.