News Article

Macom To Show GaN-on-Si Range At IMS 2018

News

Featured devices include 60W Power Doherty module for next generation wireless basestations and the industry's first GaN-on-silicon based RF energy toolkit

Macom Technology will show its GaN-on-Silicon portfolio, lightwave antennas, and other high-performance MMIC and diode products at IEEE's International Microwave Symposium (IMS) 2018 in Philadelphia, Pennsylvania, June 12th "“ 14th.

The company's GaN-on-silicon products combine manufacturing scale, supply security, and surge capacity from STMicroelectronics with Macom's GaN-on-Silicon RF power products to address mainstream consumer, automotive, and wireless basestation programs/

Featured GaN-on-Si devices include a 60W average Power Doherty module for next generation wireless basestations, and the industry's first GaN-on-silicon based RF energy toolkit.

Lightwave antenna solutions combine RF coherent beamforming and Fibre-to-the-Element optical transport to deliver wideband performance, low latency and improved spectral efficiency

Macom experts will also be participating in various sessions throughout IMS, including 'GaN-on-Silicon Transcendent "“ Enabling The Cost, Integration, and Affordability Challenges to Make 5G a Reality', by Anthony Fischetti, which is on Tuesday 12th as part of a 5G Summit session.


×
Search the news archive

To close this popup you can press escape or click the close icon.
×
Logo
×
Register - Step 1

You may choose to subscribe to the Compound Semiconductor Magazine, the Compound Semiconductor Newsletter, or both. You may also request additional information if required, before submitting your application.


Please subscribe me to:

 

You chose the industry type of "Other"

Please enter the industry that you work in:
Please enter the industry that you work in:
 
X
{megaLeaderboard}
X
{normalLeaderboard}
Live Event