News Article

Qorvo Announces X-Band GaN FEMs For Radar

Four-in-one packaging combines size, weight, power and cost advantages with high RF survivability

RF company Qorvo has introduced two very compact, high-performance, X-band front end modules (FEMs) designed for use in next-generation active electronically scanned array (AESA) radar.

These export-compliant GaN products also meet the need for high RF power survivability essential for mission-critical operations.

The demand for RF front end components for radar applications is expected to exceed $1 billion by 2022, growing at 9 percent CAGR over the next five years. The market for RF GaN devices for defence applications such as radar, electronic warfare and communications is projected to grow at 24 percent CAGR over the next five years, as the adoption rate of GaN significantly outpaces other technology choices.

The new Qorvo FEMs "“ the QPM2637 and QPM1002 "“ are built on the company's innovative GaN technology, which enables higher efficiency, reliability, power and survivability, as well as savings in size, weight and cost.

The GaN FEMs provide four functions in a single compact package, including an RF switch, power amplifier, low noise amplifier and limiter. They can withstand up to 4W of input power on the receive side without permanent damage, compared with a typical GaAs low noise amplifier, which can be damaged by less than 100mW of input power.

Roger Hall, general manager of High Performance Solutions at Qorvo, said: "Qorvo's field-proven GaN technology has enabled our customers to solve many challenges associated with the design of AESA radar systems, including greater power output and reliability. The introduction of our new export-compliant GaN modules enhances our ability to deliver the highest levels of integration with four parts in one, so that customers can choose the smallest, highest-performance FEMs for mission-critical radar systems."

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