EPC To Show Latest GaN Technology At APEC 2019


EPC team will be showing new products and delivering eleven technical presentations in Anaheim

The EPC team will be delivering eleven technical presentations on GaN technology and applications at APEC 2019 in Anaheim, California from March 17th through the 21st. In addition, the company will demonstrate its latest eGaN FETs and ICs in customers' end products that are enabled by eGaN technology.

Demonstrate addressing DC-DC power levels starting at 120 W to 3 kW will be on display. These include a high-power density 48 V - 12 V non-isolated, bidirectional converter capable of delivering 3 kW.

In addition, a range of 3-D real-time Lidar imaging sensors used in autonomous vehicles will be displayed. Also on display will be high power resonant wireless charging solution capable of wirelessly powering a wide range of devices including cell phones, notebook computers, monitors, wireless speakers, smartwatches, and table lamps. Redefining the power conversion component, a new GaN IC will be shown.

Technical Presentations Featuring GaN FETs and Integrated Circuits by EPC Experts include:

WBG Device Characterisation for Converter Design: Challenges and Solutions Instructors: Fred Wang, Zheyu Zhang, Edward A. Jones

Evaluation of GaN-Based Multilevel Converters Presenter: Yuanzhe Zhang

GaN's Frontal Assault on Silicon at 48 Volts Presenter:Alex Lidow

Design and Measurement of High Power Nanosecond Pulse Circuits for Laser Drivers Presenter: John Glaser

Evaluation of Symmetrical and Asymmetrical Scaling GaN FETs in High Step-down Ratio Half-Bridge Converters Presenters: Jianjing Wang, Edward Jones, Michael de Rooij

GaN-Based High-Density Unregulated 48 V to x V LLC Converters with ≥ 98% Efficiency for Future Data Centers Presenters: Mohamed Ahmed, Michael de Rooij

Improving Efficiency in Highly Resonant Wireless Power Systems Presenters: Michael de Rooij, Yuanzhe Zhang

Rectifier Topology Optimisation in Resonant Wireless Power Systems Presenter: Michael de Rooij, Yuanzhe Zhang

Thermal Design for a High-Density GaN-Based Power Stage Presenter: Edward Jones

GaN Reliability for Automotive - Testing Beyond AEC-Q Presenter: Robert Strittmatter

Hard-Switching Dynamic Rdson Characterisation of a GaN FET with an Active GaN-Based Clamping Circuit Presenter: Edward Jones

CS International 26-27 March 2019, Sheraton Airport Hotel, Brussels

In its ninth year, CS International will continue to provide timely, comprehensive coverage of every important sector within the compound semiconductor industry. Presentations are split into 5 key themes and each industry key theme will be delivered by a keynote presentation from a leading industry figure as well as a market analyst presentation tailored to the theme. Together, the talks will detail breakthroughs in device technology; offer insights into the current status and the evolution of compound semiconductor devices; and provide details of advances in tools and processes that will help to drive up fab yields and throughputs. Attendees at the two-day conference will gain an up-to-date overview of the status of the CS industry, and have opportunities to meet many other key players within this community.

Places will be limited, so register your place today:

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